发明申请
- 专利标题: Charged particle beam drawing equipment, method of adjusting aperture mask, and method of manufacturing semiconductor device
- 专利标题(中): 带电粒子束拉制设备,调整孔径掩模的方法和制造半导体器件的方法
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申请号: US11172996申请日: 2005-07-05
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公开(公告)号: US20060017013A1公开(公告)日: 2006-01-26
- 发明人: Takumi Ota , Tetsuro Nakasugi
- 申请人: Takumi Ota , Tetsuro Nakasugi
- 优先权: JP2004-199349 20040706
- 主分类号: G21G5/00
- IPC分类号: G21G5/00 ; A61N5/00
摘要:
A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.
公开/授权文献
信息查询
IPC分类:
G | 物理 |
G21 | 核物理;核工程 |
G21G | 化学元素的转变;放射源 |
G21G5/00 | 通过化学反应进行化学元素的推断转变 |