发明申请
- 专利标题： Image sensor production method and image sensor
- 专利标题（中）： 图像传感器生产方法和图像传感器
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申请号： US11236602申请日： 2005-09-28
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公开(公告)号： US20060017075A1公开(公告)日： 2006-01-26
- 发明人: Kensuke Sawase , Yuji Matsumoto , Kiyotaka Sawa
- 申请人： Kensuke Sawase , Yuji Matsumoto , Kiyotaka Sawa
- 优先权： JP2003-197965 20030716
- 主分类号： H01L29/768
- IPC分类号： H01L29/768
摘要：
A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.
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