发明申请
- 专利标题： Field-effect transistor
- 专利标题（中）： 场效应晶体管
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申请号： US10526470申请日： 2003-09-04
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公开(公告)号： US20060017080A1公开(公告)日： 2006-01-26
- 发明人: Hidekazu Tanaka , Tomoji Kawai , Teruo Kanki , Young- Geun Park
- 申请人： Hidekazu Tanaka , Tomoji Kawai , Teruo Kanki , Young- Geun Park
- 申请人地址： JP Saitama
- 专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
- 当前专利权人地址： JP Saitama
- 优先权： JP2002-260536 20020905
- 国际申请： PCT/JP03/11300 WO 20030904
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.
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