发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11180675申请日： 2005-07-14
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公开(公告)号： US20060017090A1公开(公告)日： 2006-01-26
- 发明人: Naomi Fukumaki , Yoshitake Kato , Ken Inoue
- 申请人： Naomi Fukumaki , Yoshitake Kato , Ken Inoue
- 申请人地址： JP KAWASAKI
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP KAWASAKI
- 优先权： JP2004-216515 20040723
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A semiconductor device includes a cylinder-shaped capacitor. The capacitor includes a second insulating layer formed with a recessed portion formed on a semiconductor substrate, a cylinder shaped lower electrode formed in the recessed portion, a capacitance layer formed on the lower electrode, and an upper electrode formed on the capacitance layer. The upper electrode includes a first metal layer formed by PVD and a second metal layer formed thereafter by CVD, and the cylinder sidewall of the first metal layer has a thickness of 2 nm or less.
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