公开(公告)号：US09142609B2

公开(公告)日：2015-09-22

申请号：US12929287

申请日：2011-01-12

申请人： Youichi Yamamoto ,  Naomi Fukumaki ,  Misato Sakamoto ,  Yoshitake Kato

发明人： Youichi Yamamoto ,  Naomi Fukumaki ,  Misato Sakamoto ,  Yoshitake Kato

IPC分类号： H01L27/108 ,  H01L29/92 ,  H01L49/02 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L28/60 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/31 ,  H01L21/76856 ,  H01L27/1085 ,  H01L28/91 ,  H01L29/517

摘要： A semiconductor device has a capacitor element in which a capacitance dielectric film is disposed between an upper electrode film (upper electrode film, an upper electrode film) and a lower electrode film, and the lower electrode film has polycrystalline titanium nitride at least to a portion in contact with the capacitance dielectric film.

摘要翻译： 半导体器件具有电容器元件，其中电容电介质膜设置在上电极膜（上电极膜，上电极膜）和下电极膜之间，并且下电极膜具有至少一部分的多晶氮化钛 与电容电介质膜接触。

公开(公告)号：US08940601B2

公开(公告)日：2015-01-27

申请号：US13543750

申请日：2012-07-06

申请人： Misato Sakamoto ,  Youichi Yamamoto ,  Masayuki Tachikawa ,  Yoshitake Kato

发明人： Misato Sakamoto ,  Youichi Yamamoto ,  Masayuki Tachikawa ,  Yoshitake Kato

IPC分类号： H01L21/8242 ,  H01L49/02

CPC分类号： H01L28/91 ,  H01L28/40 ,  H01L28/60

摘要： A manufacturing method of a semiconductor device includes the following steps. Firstly, a lower electrode is formed over a substrate (semiconductor substrate). Successively, the lower electrode is primarily crystallized. Successively, a capacitance dielectric layer is formed over the lower electrode after primarily crystallized. Successively, the capacitance dielectric layer is secondarily crystallized. Then, an upper electrode is formed over the capacitance dielectric layer.

摘要翻译： 半导体器件的制造方法包括以下步骤。 首先，在基板（半导体基板）上形成下电极。 接下来，下电极主要结晶。 接下来，在主要结晶之后，在下电极上形成电容电介质层。 接着，电容电介质层二次结晶。 然后，在电容电介质层上形成上电极。

公开(公告)号：US08685866B2

公开(公告)日：2014-04-01

申请号：US12822317

申请日：2010-06-24

申请人： Sadayoshi Horii ,  Atsushi Sano ,  Masahito Kitamura ,  Yoshitake Kato

发明人： Sadayoshi Horii ,  Atsushi Sano ,  Masahito Kitamura ,  Yoshitake Kato

IPC分类号： H01L21/31

CPC分类号： H01L21/3141 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45531 ,  C23C16/45561 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

摘要： A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.

摘要翻译： 一种制造半导体器件的方法，包括交替地重复形成包括第一金属元素的第一金属氧化物膜的工艺和在容纳在处理室中的基板上形成包括第二金属元素的第二金属氧化物膜的工艺，以便 在衬底上形成具有预定组成比的第一和第二金属元素的第三金属氧化物膜。 第三金属氧化物膜的第一和第二金属元素中的一个具有比另一个的浓度高的浓度，并且包括高浓度金属元素的第一和第二金属氧化物膜中的一个在化学气相沉积中形成 CVD）模式或原子层沉积（ALD）饱和模式，并且第一和第二金属氧化物膜中的另一个以ALD不饱和模式形成。

公开(公告)号：US20090057739A1

公开(公告)日：2009-03-05

申请号：US12230448

申请日：2008-08-28

申请人： Hiroshi Iwai ,  Takeo Hattori ,  Kazuo Tsutsui ,  Kuniyuki Kakushima ,  Parhat Ahmet ,  Jaeyeol Song ,  Masaki Yoshimaru ,  Yasuyoshi Mishima ,  Tomonori Aoyama ,  Hiroshi Oji ,  Yoshitake Kato

发明人： Hiroshi Iwai ,  Takeo Hattori ,  Kazuo Tsutsui ,  Kuniyuki Kakushima ,  Parhat Ahmet ,  Jaeyeol Song ,  Masaki Yoshimaru ,  Yasuyoshi Mishima ,  Tomonori Aoyama ,  Hiroshi Oji ,  Yoshitake Kato

IPC分类号： H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/517 ,  C23C14/021 ,  C23C14/024 ,  C23C14/08 ,  C23C14/18 ,  C23C14/30 ,  H01L21/28158 ,  H01L21/28255 ,  H01L21/31604 ,  H01L29/78

摘要： The Ge channel device comprises: a Ge channel layer (2); a Si-containing interface layer (4) formed on the Ge channel layer (2); a La2O3 layer (6) formed on the interface layer (4); and an electrically conductive layer (8) formed on the La2O3 layer (6). In this device, the Si-containing interface layer (4) functions to suppress the diffusion of Ge atoms into the La2O3 layer (6) and thereby prevents the formation of Ge oxide in the La2O3 layer (6); accordingly, a Ge channel device whose C-V characteristic exhibits only a small hysteresis can be achieved.

摘要翻译： Ge沟道器件包括：Ge沟道层（2）; 形成在所述Ge沟道层（2）上的含Si界面层（4）; 在所述界面层（4）上形成的La 2 O 3层（6）; 和形成在La 2 O 3层（6）上的导电层（8）。 在该器件中，含Si界面层（4）用于抑制Ge原子扩散到La2O3层（6）中，从而防止La2O3层（6）中Ge氧化物的形成; 因此，可以实现其C-V特性仅具有小滞后的Ge通道器件。

公开(公告)号：US06306667B1

公开(公告)日：2001-10-23

申请号：US09577993

申请日：2000-05-25

申请人： Koji Arita ,  Yoshitake Kato

发明人： Koji Arita ,  Yoshitake Kato

IPC分类号： H01L2100

CPC分类号： H01L28/55 ,  H01L27/1085

摘要： In a method for forming a capacitor in the semiconductor memory, a lower electrode is formed on an interlayer insulator film, and a high dielectric constant insulating film is formed to cover the whole surface including the lower electrode. Furthermore, an upper electrode layer is formed to cover the high dielectric constant insulating film. Thereafter, a plasma treatment is carried out to expose a surface of the upper electrode layer to plasma so that a suctorial layer is uniformly formed at the whole surface of the upper electrode layer, and then, a NSG film is grown on the whole surface of the upper electrode layer by a CVD process using TEOS as a starting material. Thus, an interlayer insulator film of the NSG film can be formed to have a uniform film thickness over the whole surface of the upper electrode.

摘要翻译： 在半导体存储器中形成电容器的方法中，在层间绝缘膜上形成下电极，形成高介电常数绝缘膜以覆盖包括下电极的整个表面。 此外，形成上电极层以覆盖高介电常数绝缘膜。 此后，进行等离子体处理以将上电极层的表面暴露于等离子体，使得在上电极层的整个表面上均匀地形成均匀的层，然后在整个表面上生长NSG膜 通过使用TEOS作为起始材料的CVD工艺的上电极层。 因此，可以形成NSG膜的层间绝缘膜，以在上电极的整个表面上具有均匀的膜厚度。

公开(公告)号：US5317467A

公开(公告)日：1994-05-31

申请号：US701823

申请日：1991-05-17

申请人： Yoshitake Kato ,  Kazuya Fukunaga ,  Akira Katami ,  Shinichiro Oda

发明人： Yoshitake Kato ,  Kazuya Fukunaga ,  Akira Katami ,  Shinichiro Oda

IPC分类号： G11B5/84 ,  G11B23/03 ,  G11B23/02

CPC分类号： G11B5/84 ,  G11B23/0315 ,  Y10T428/13 ,  Y10T428/1352

摘要： A data recording cartridge provided with a cartridge case and a recording medium accommodated therein, wherein the cartridge case is molded from at least one of the following materials:(1) composition of uniformly dispersed styrol resin and a polycarbonate resin;(2) composition of uniformly dispersed styrol resin and a nitrogen containing resin;(3) composition of uniformly dispersed styrol resin and an ester resin;(4) styrol resin styrene of which is partially substituted with .alpha.-methylstyrene;(5) styrene-maleic anhydride copolymer modified with rubber;(6) composition of polypropylene polymer containing an inorganic filler dispersed therein;(7) copolymer of N-substituted maleimide resin and styrol resin; and(8) composition of uniformly dispersed N-substituted maleimide resin and styrol resin.

摘要翻译： 一种数据记录盒，其具有容纳在其中的盒壳和记录介质，其中，所述盒壳由以下材料中的至少一种成型：（1）均匀分散的苯乙烯树脂和聚碳酸酯树脂的组合物; （2）均匀分散的苯乙烯树脂和含氮树脂的组合物; （3）均匀分散的苯乙烯树脂和酯树脂的组成; （4）苯乙烯树脂苯乙烯部分被α-甲基苯乙烯取代; （5）用橡胶改性的苯乙烯 - 马来酸酐共聚物; （6）分散有无机填料的聚丙烯聚合物的组成; （7）N-取代马来酰亚胺树脂与苯乙烯树脂的共聚物; 和（8）均匀分散的N-取代的马来酰亚胺树脂和苯乙烯树脂的组合物。

公开(公告)号：US4970618A

公开(公告)日：1990-11-13

申请号：US243836

申请日：1988-09-13

申请人： Yoshitake Kato ,  Minoru Fujita

发明人： Yoshitake Kato ,  Minoru Fujita

IPC分类号： G11B23/033 ,  G11B23/03

CPC分类号： G11B23/0326 ,  G11B23/0313

摘要： A disk cartridge has a pair of cases, one of the cases including boss portions each having a welding allowance at a top end thereof, the boss portions being projected from one of the cases, the other of the cases being provided with cylindrical portions into which the boss portions are respectively inserted when the cases are superposed, and the welding allowances of the boss portions and inner bottom portions of the cylindrical portions are supersonically-welded to each other, the disk cartridge further including portions for controlling the air flow which includes resin particles generated at the time of the supersonic welding in such a manner that the air flow is directed to that outside of a region in which a disk rotates, the controlling portions being situated adjacent to the welded portions of the cases, thereby avoiding fear of resin particles being adhered to the disk surfaces during ultrasonic welding.

摘要翻译： 磁盘盒具有一对壳体，其中一个壳体包括凸起部分，每个凸起部分在其顶端处具有焊接余量，凸起部分从一个壳体突出，另一个壳体设置有圆柱形部分， 当壳体重叠时，凸起部分分别插入，并且凸起部分和圆柱形部分的内底部的焊接余量彼此超声焊接，盘盒还包括用于控制包括树脂的气流的部分 在超音速焊接时产生的颗粒以使得空气流被引导到盘旋转的区域的外侧，控制部分位于壳体的焊接部分附近，从而避免了树脂的恐惧 在超声波焊接期间，颗粒粘附到盘表面。

公开(公告)号：US4743994A

公开(公告)日：1988-05-10

申请号：US829217

申请日：1986-02-14

申请人： Yoshitake Kato ,  Hiroshi Maruyama

发明人： Yoshitake Kato ,  Hiroshi Maruyama

IPC分类号： G11B17/03 ,  G11B23/00 ,  G11B23/033 ,  G11B23/03

CPC分类号： G11B23/0035 ,  G11B17/03 ,  G11B23/0332

摘要： In a recording disc cartridge, a surface of a disc supporting plate to which surface the recording disc is secured is made as a contacting surface for detachably contacting with a reference surface of a disc drive device so as to easily and correctly position the recording disc relative to the reference surface of the disc drive.

摘要翻译： 在记录盘盒中，将形成有记录盘的表面的盘支撑板的表面制成为用于与盘驱动装置的基准表面可拆卸地接触的接触表面，以便容易且正确地定位记录盘相对 到盘驱动器的参考表面。

公开(公告)号：US4734815A

公开(公告)日：1988-03-29

申请号：US888424

申请日：1986-07-23

申请人： Nobuhiko Naganawa ,  Yoshitake Kato ,  Minoru Fujita ,  Kazuya Fukunaga

发明人： Nobuhiko Naganawa ,  Yoshitake Kato ,  Minoru Fujita ,  Kazuya Fukunaga

IPC分类号： G11B23/033 ,  G11B23/50 ,  G11B23/02

CPC分类号： G11B23/0332 ,  G11B23/505

摘要： A disc cartridge which comprises an outer case formed of a top half and a bottom half assembled to the top half to provide a disc chamber for accommodating a recording disc adapted to be rotated, a pair of pressure plates mounted in the top half and bottom half so as to oppose each other, cleaning sheets laid between a disc and the pressure plates and openings defined respectively in the top half and bottom half so as to correspond to each of the pressure plates for pressing the pressure plates toward the disc.

摘要翻译： 一种盘盒，包括由上半部和下半部组成的外壳，其组装到上半部以提供用于容纳适于旋转的记录盘的盘室，安装在上半部和下半部的一对压板 以便彼此相对，将放置在盘与压力板之间的片材以及分别位于上半部和下半部分中的开口对应，以对应于用于将压板压向盘的每个压板。

公开(公告)号：US4714973A

公开(公告)日：1987-12-22

申请号：US861422

申请日：1986-05-09

申请人： Yoshitake Kato ,  Minoru Fujita ,  Hiroshi Maruyama

发明人： Yoshitake Kato ,  Minoru Fujita ,  Hiroshi Maruyama

IPC分类号： G11B23/03 ,  G11B23/033

CPC分类号： G11B23/0332 ,  G11B23/0308

摘要： In a disc cartridge comprising a cartridge case and a shutter slidably mounted on the cartridge case for opening and closing a head accessing opening, the shutter comprises a first plate and a second plate opposing to the first plate, a connection member for connecting the first plate and the second plate, and a projection formed on at least one of the first and second plates of the shutter in such a manner that the projection is slanted toward the connection member.

摘要翻译： 在包括盒壳体和可滑动地安装在盒壳上用于打开和关闭磁头存取开口的挡板的盘盒中，闸板包括第一板和与第一板相对的第二板，用于连接第一板 和第二板，以及突起形成在活门的第一板和第二板中的至少一个上的突起，使得突起朝向连接构件倾斜。