发明申请
US20060017113A1 High transconductance and drive current high voltage MOS transistors
审中-公开
高跨导和驱动电流高压MOS晶体管
- 专利标题： High transconductance and drive current high voltage MOS transistors
- 专利标题（中）： 高跨导和驱动电流高压MOS晶体管
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申请号： US11186366申请日： 2005-07-21
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公开(公告)号： US20060017113A1公开(公告)日： 2006-01-26
- 发明人: Haifeng Xu , Kenneth O
- 申请人： Haifeng Xu , Kenneth O
- 申请人地址： US FL GAINESVILLE
- 专利权人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
- 当前专利权人： UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
- 当前专利权人地址： US FL GAINESVILLE
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A composite MOS transistor (100) includes a first MOS sub-transistor (105) having a first gate dielectric thickness (106), and a second MOS sub-transistor (155) in series connection with the first MOS sub-transistor having a second gate dielectric thickness (107). The second gate dielectric thickness (107) is substantially thicker than the first gate dielectric thickness (106) preferably being at least 50% thicker. Composite MOS transistors generally provide a breakdown voltage (Vds) approaching that of the second MOS sub-transistor (155) and a threshold voltage, transconductance and drive current all approaching that of the first MOS sub-transistor (105), such as being within 20%, and preferably within 10%, of the reference parameter. A level shifting circuit includes first and at least a second drive transistor, wherein the drive transistors are composite MOS transistors.
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