The present invention relates to a method for producing a dielectric on a semiconductor body having the following steps that are to be performed successively: provision of a semiconductor body, application of a dielectric layer on at least parts of a first surface of the semiconductor body in such a way as at least partly to form an interface between the dielectric layer and the semiconductor body, and thermal annealing of the semiconductor body and the dielectric layer. The method according to the invention is distinguished by the fact that temporally prior to the annealing, for the purpose of improving the saturation and the electrical properties, fluorine-containing particles are introduced into regions of the semiconductor body and/or of the dielectric layer which adjoin the interface. The present invention furthermore relates to a corresponding semiconductor structure.