发明申请
- 专利标题: CREATING INCREASED MOBILITY IN A BIPOLAR DEVICE
- 专利标题(中): 在双极设备中创建增加的移动性
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申请号: US10710548申请日: 2004-07-20
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公开(公告)号: US20060019458A1公开(公告)日: 2006-01-26
- 发明人: Dureseti Chidambarrao , Gregory Freeman , Marwan Khater
- 申请人: Dureseti Chidambarrao , Gregory Freeman , Marwan Khater
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/331
- IPC分类号: H01L21/331 ; H01L21/8222
摘要:
The mobility of charge carriers in a bipolar (BJT) device is increased by creating compressive strain in the device to increase mobility of electrons in the device, and creating tensile strain in the device to increase mobility of holes in the device. The compressive and tensile strain are created by applying a stress film adjacent an emitter structure of the device and atop a base film of the device. In this manner, the compressive and tensile strain are located in close proximity to an intrinsic portion of the device. A suitable material for the stress film is nitride. The emitter structure may be “T-shaped”, having a lateral portion atop an upright portion, a bottom of the upright portion forms a contact to the base film, and the lateral portion overhangs the base film.
公开/授权文献
- US07329941B2 Creating increased mobility in a bipolar device 公开/授权日:2008-02-12
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