发明申请
- 专利标题： Semiconductor thin film crystallization device and semiconductor thin film crystallization method
- 专利标题（中）： 半导体薄膜结晶装置和半导体薄膜结晶方法
-
申请号： US11190707申请日： 2005-07-26
-
公开(公告)号： US20060019474A1公开(公告)日： 2006-01-26
- 发明人: Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
- 申请人： Tetsuya Inui , Junichiro Nakayama , Yoshihiro Taniguchi , Masanori Seki , Hiroshi Tsunasawa , Ikumi Kashiwagi
- 优先权： JPP2004-217089 20040726
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/324 ; H01L21/20
摘要：
A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.
公开/授权文献
信息查询
IPC分类:
