公开(公告)号：US07381632B2

公开(公告)日：2008-06-03

申请号：US11190707

申请日：2005-07-26

申请人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

发明人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

IPC分类号： H01L21/36

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/78672 ,  H01L29/78696

摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

公开(公告)号：US20080084901A1

公开(公告)日：2008-04-10

申请号：US11982568

申请日：2007-11-02

申请人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

发明人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

IPC分类号： H01S3/10 ,  H01L31/0248

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/78672 ,  H01L29/78696

摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

摘要翻译： 第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。 第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以形成与第二激光束相似的第二光束点 配置到第一束斑并且包含第一束斑。 在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。 由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。 因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

公开(公告)号：US20060019474A1

公开(公告)日：2006-01-26

申请号：US11190707

申请日：2005-07-26

申请人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

发明人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

IPC分类号： H01L21/84 ,  H01L21/324 ,  H01L21/20

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/78672 ,  H01L29/78696

摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

摘要翻译： 第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。 第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以便形成与第 配置到第一束斑并且包含第一束斑。 在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。 由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。 因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

公开(公告)号：US20050211987A1

公开(公告)日：2005-09-29

申请号：US11088216

申请日：2005-03-22

申请人： Ikumi Kashiwagi ,  Junichiro Nakayama

发明人： Ikumi Kashiwagi ,  Junichiro Nakayama

IPC分类号： C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/84 ,  H01L29/04

CPC分类号： H01L21/02675 ,  C30B13/24 ,  C30B29/06 ,  H01L21/2026 ,  H01L29/04 ,  H01L29/66772 ,  Y10T117/10

摘要： A semiconductor device having a semiconductor film formed on a substrate, characterized in that the semiconductor film has laterally grown crystal, and at an end portion of the laterally grown crystal, height of surface projection is lower than film thickness of said semiconductor film, is provided.

摘要翻译： 一种半导体器件，其具有形成在基板上的半导体膜，其特征在于，所述半导体膜具有横向生长的晶体，并且在横向生长的晶体的端部，表面突出的高度低于所述半导体膜的膜厚度 。