发明申请
US20060022266A1 MANUFACTURABLE RECESSED STRAINED RSD STRUCTURE AND PROCESS FOR ADVANCED CMOS
失效
可制造的应变型RSD结构和高级CMOS的工艺
- 专利标题: MANUFACTURABLE RECESSED STRAINED RSD STRUCTURE AND PROCESS FOR ADVANCED CMOS
- 专利标题(中): 可制造的应变型RSD结构和高级CMOS的工艺
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申请号: US10710738申请日: 2004-07-30
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公开(公告)号: US20060022266A1公开(公告)日: 2006-02-02
- 发明人: Brian Messenger , Renee Mo , Dominic Schepis
- 申请人: Brian Messenger , Renee Mo , Dominic Schepis
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/84
摘要:
A manufacturable way to recess silicon that employs an end point detection method for the recess etch and allows tight tolerances on the recess is described for fabricating a strained raised source/drain layer. The method includes forming a monolayer comprising oxygen and carbon on a surface of a doped semiconductor substrate; forming an epi Si layer atop the doped semiconductor substrate; forming at least one gate region on the epi Si layer; selectively etching exposed portions of the epi layer, not protected by the gate region, stopping on and exposing the doped semiconductor substrate using end point detection; and forming a strained SiGe layer on the exposed doped semiconductor substrate. The strained SiGe layer serves as a raised layer in which source/drain diffusion regions can be subsequently formed.
公开/授权文献
- US07115955B2 Semiconductor device having a strained raised source/drain 公开/授权日:2006-10-03