发明申请
- 专利标题: Semiconductor device and a manufacturing method of the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11192069申请日: 2005-07-29
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公开(公告)号: US20060022298A1公开(公告)日: 2006-02-02
- 发明人: Masaki Shiraishi , Tomoaki Uno , Nobuyoshi Matsuura
- 申请人: Masaki Shiraishi , Tomoaki Uno , Nobuyoshi Matsuura
- 优先权: JP2004-223664 20040730
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET GF low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chips and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.
公开/授权文献
- US07687902B2 Semiconductor device and a manufacturing method of the same 公开/授权日:2010-03-30
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