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公开(公告)号：US08159054B2
公开(公告)日：2012-04-17
申请号：US13188613
申请日：2011-07-22
IPC分类号： H01L23/495
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOSωFET for a high side switch and a power MOSωFET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译： 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOSωFET和用于低侧开关的功率MOSωFET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。
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公开(公告)号：US08013430B2
公开(公告)日：2011-09-06
申请号：US12708044
申请日：2010-02-18
IPC分类号： H01L23/495
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS·FET for a high side switch and a power MOS·FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译： 本发明提供一种非绝缘型DC-DC转换器，其具有用于高侧开关的功率MOS·FET和低侧开关的功率MOS·FET串联连接的电路。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。
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3.发明授权Semiconductor device including a DC-DC converter with schottky barrier diode 有权包括具有肖特基势垒二极管的DC-DC转换器的半导体器件公开(公告)号：US08519533B2
公开(公告)日：2013-08-27
申请号：US13396073
申请日：2012-02-14
IPC分类号： H01L23/34
CPC分类号： H01L27/0629 , H01L21/28035 , H01L21/823475 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L29/1095 , H01L29/41741 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/45 , H01L29/456 , H01L29/4916 , H01L29/66143 , H01L29/66734 , H01L29/7806 , H01L29/7813 , H01L29/872 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05624 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48011 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48253 , H01L2224/48624 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1532 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/155 , H02M7/003
摘要： In a non-insulated DC-DC converter having a circuit in which a power MOS•FET high-side switch and a power MOS•FET low-side switch are connected in series, the power MOS•FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS•FET low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chip, and on both sides thereof, the formation regions of the power MOS•FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.
摘要翻译： 在具有电源MOS.FET高侧开关和功率MOS.FET低侧开关串联连接的电路的非绝缘DC-DC转换器中，功率MOS.FET低侧开关和肖特基 与功率MOS.FET低侧开关并联连接的阻挡二极管形成在一个半导体芯片内。 肖特基势垒二极管的形成区域SDR设置在半导体芯片的较短方向的中心，并且在其两侧设置功率MOS.FET低侧开关的形成区域。 从半导体芯片的主表面的两长边附近的栅极指向肖特基势垒二极管的形成区域SDR，设置多个栅极指，以便在它们之间插入形成区域SDR。
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公开(公告)号：US20120139130A1
公开(公告)日：2012-06-07
申请号：US13372227
申请日：2012-02-13
IPC分类号： H01L23/49
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译： 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS•FET和低边开关的功率MOS•FET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。
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公开(公告)号：US08044468B2
公开(公告)日：2011-10-25
申请号：US12247326
申请日：2008-10-08
IPC分类号： H01L23/62
CPC分类号： H01L25/165 , H01L24/37 , H01L24/40 , H01L24/41 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40245 , H01L2224/4103 , H01L2224/48091 , H01L2224/48472 , H01L2224/49111 , H01L2224/49431 , H01L2224/49433 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2924/01019 , H01L2924/01079 , H01L2924/12032 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H02M3/1588 , H03K17/6871 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.
摘要翻译： 本发明提高了半导体器件的电压转换效率。 在一个非隔离DC-DC转换器中，包括串联的高侧开关功率MOSFET和低侧开关功率MOSFET，高侧开关功率MOSFET和驱动电路用于驱动高边和 低侧开关功率MOSFET形成在一个半导体芯片内，而低边开关功率MOSFET则形成在另一个半导体芯片中。 两个半导体芯片被封装在单个封装中。
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公开(公告)号：US07554209B2
公开(公告)日：2009-06-30
申请号：US11680758
申请日：2007-03-01
IPC分类号： H01L23/48
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译： 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS.FET和用于低侧开关的功率MOS.FET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。
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公开(公告)号：US07535741B2
公开(公告)日：2009-05-19
申请号：US11863556
申请日：2007-09-28
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The object of the present invention is to reduce parasitic inductance of a main circuit in a power supply circuit. The present invention provides a non-insulated DC-DC converter having a circuit in which a power MOS•FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译： 本发明的目的是减少电源电路中的主电路的寄生电感。 本发明提供一种非绝缘DC-DC转换器，其具有用于高侧开关的功率MOSFET和用于低侧开关的功率MOS.FET串联连接的电路。 在非绝缘DC-DC转换器中，用于高侧开关的功率MOS.FET由p沟道垂直MOSFET形成，低边开关的功率MOS.FET由n沟道垂直 MOS.FET。 因此，形成有用于高侧开关的功率MOS.FET和形成有用于低侧开关的功率MOSFET的半导体芯片的半导体芯片安装在相同的芯片焊盘上，并通过 芯片垫
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公开(公告)号：US20090026544A1
公开(公告)日：2009-01-29
申请号：US12237082
申请日：2008-09-24
IPC分类号： H01L29/00
CPC分类号： H02M1/08 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2224/8485 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01059 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2924/20753
摘要： A non-insulated DC-DC converter has a power MOS•FET for a highside switch and a power MOS•FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS•FET for the highside switch and the power MOS•FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS•FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.
摘要翻译： 非绝缘DC-DC转换器具有用于高侧开关的功率MOS.FET和用于低端开关的功率MOS.FET。 在非绝缘DC-DC转换器中，用于高侧开关的功率MOS.FET和用于低端开关的功率MOS.FET，分别控制这些元件的操作的驱动电路和与...并联连接的肖特基势垒二极管 用于低端开关的功率MOS.FET分别形成在四个不同的半导体芯片中。 这四个半导体芯片容纳在一个封装中。 半导体芯片安装在相同的芯片焊盘上。 半导体芯片被配置为彼此接近。
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公开(公告)号：US07295453B2
公开(公告)日：2007-11-13
申请号：US11288103
申请日：2005-11-29
CPC分类号： G05F3/08 , H01L23/3107 , H01L23/4824 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/16 , H01L29/1095 , H01L29/4175 , H01L29/41758 , H01L29/41766 , H01L29/4238 , H01L29/7811 , H01L29/7813 , H01L29/7835 , H01L2224/05554 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/48644 , H01L2224/48647 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85375 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/12032 , H01L2924/12036 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M7/003 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The object of the present invention is to reduce parasitic inductance of a main circuit in a power supply circuit. The present invention provides a non-insulated DC-DC converter having a circuit in which a power MOS• FET for a high-side switch and a power MOS•FET for a low-side switch are connected in series. In the non-insulated DC-DC converter, the power MOS•FET for the high-side switch is formed by a p channel vertical MOS•FET, and the power MOS•FET for the low-side switch is formed by an n channel vertical MOS•FET. Thus, a semiconductor chip formed with the power MOS•FET for the high-side switch and a semiconductor chip formed with the power MOS•FET for the low-side switch are mounted over the same die pad and electrically connected to each other through the die pad.
摘要翻译： 本发明的目的是减少电源电路中的主电路的寄生电感。 本发明提供一种具有功率MOS的电路的非绝缘DC-DC转换器。 用于高侧开关的FET和用于低侧开关的功率MOS.FET串联连接。 在非绝缘DC-DC转换器中，用于高侧开关的功率MOS.FET由p沟道垂直MOSFET形成，低边开关的功率MOS.FET由n沟道垂直 MOS.FET。 因此，形成有用于高侧开关的功率MOS.FET和形成有用于低侧开关的功率MOSFET的半导体芯片的半导体芯片安装在相同的芯片焊盘上，并通过 芯片垫
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公开(公告)号：US20050231990A1
公开(公告)日：2005-10-20
申请号：US11108825
申请日：2005-04-19
IPC分类号： H01L25/07 , H01L21/8238 , H01L25/04 , H01L25/18 , H01L27/092 , H01L29/06 , H01L29/78 , H02M1/08 , H02M3/155 , H02M7/217
CPC分类号： H02M1/08 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2224/8485 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01059 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2924/20753
摘要： A non-insulated DC-DC converter a power MOS·FRT for a highside switch and a power MOS·FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS·FET for the highside switch and the power MOS·FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS·FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.
摘要翻译： 一个非绝缘DC-DC转换器，一个用于高侧开关的功率MOS.FRT和一个用于低端开关的功率MOS.FET。 在非绝缘DC-DC转换器中，用于高侧开关的功率MOS.FET和用于低端开关的功率MOS.FET，分别控制这些元件的操作的驱动电路和与...并联连接的肖特基势垒二极管 用于低端开关的功率MOS.FET分别形成在四个不同的半导体芯片中。 这四个半导体芯片容纳在一个封装中。 半导体芯片安装在相同的芯片焊盘上。 半导体芯片被配置为彼此接近。
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