发明申请
- 专利标题： Semiconductor device capable of preventing chemical damage and method for fabricating the same
- 专利标题（中）： 能够防止化学损伤的半导体装置及其制造方法
-
申请号： US11143139申请日： 2005-06-01
-
公开(公告)号： US20060022344A1公开(公告)日： 2006-02-02
- 发明人: Sung-Kwon Lee , Tae-Woo Jung
- 申请人： Sung-Kwon Lee , Tae-Woo Jung
- 优先权： KR2004-0059533 20040729
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
Disclosed are a semiconductor device with a three-dimensional storage node and a method for fabricating the same. The semiconductor device includes: an inter-layer insulation layer formed on a substrate; a first plug contacted to the substrate by penetrating into the inter-layer insulation layer; an insulation layer formed on the first plug; a second plug contacted to the first plug by penetrating into the insulation layer and projected in an upward direction from a surface level of the insulation layer; a barrier layer formed on the second plug and the insulation layer; and a storage node formed on the second plug to be connected with the second plug through a portion where the barrier layer is removed.
信息查询
IPC分类:
