发明申请
- 专利标题： Flash memory unit and method of programming a flash memory device
- 专利标题（中）： 闪存单元和闪存设备编程方法
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申请号： US10909693申请日： 2004-08-02
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公开(公告)号： US20060023511A1公开(公告)日： 2006-02-02
- 发明人: Zhigang Wang , Nian Yang , Zhizheng Liu
- 申请人： Zhigang Wang , Nian Yang , Zhizheng Liu
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; G11C11/34
摘要：
Disclosed are a flash memory unit and a method of programming a flash memory device. The method of programming can include applying respective programming voltages to a control gate and a drain of the memory device. A source bias potential can be applied to a source of the memory device. The application of the source bias potential can be controlled with the selective application of one of the programming voltages to a source bias switching device.
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