发明申请
- 专利标题： Selectively strained MOSFETs to improve drive current
- 专利标题（中）： 选择性应变MOSFET来提高驱动电流
-
申请号： US10902973申请日： 2004-07-31
-
公开(公告)号： US20060024879A1公开(公告)日： 2006-02-02
- 发明人: Chu-Yun Fu , Cheng-Hung Chang
- 申请人： Chu-Yun Fu , Cheng-Hung Chang
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/31
摘要：
A MOSFET device pair with improved drive current and a method for producing the same to selectively introduce strain into a respective N-type and P-type MOSFET device channel region, the method including forming a compressive stressed nitride layer on over the P-type MOSFET device and a tensile stressed nitride layer on the N-type MOSFET device followed by forming a PMD layer having a less compressive or tensile stress.
信息查询
IPC分类:
