发明申请
- 专利标题： Methods of forming capacitors
- 专利标题（中）： 形成电容器的方法
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申请号： US11206334申请日： 2005-08-17
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公开(公告)号： US20060024903A1公开(公告)日： 2006-02-02
- 发明人: Matthew Miller , Cem Basceri
- 申请人： Matthew Miller , Cem Basceri
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.
公开/授权文献
- US07329573B2 Methods of forming capacitors 公开/授权日：2008-02-12
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