公开(公告)号：US20050268856A1

公开(公告)日：2005-12-08

申请号：US10859883

申请日：2004-06-02

申请人： Matthew Miller ,  Cem Basceri

发明人： Matthew Miller ,  Cem Basceri

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/45519

摘要： A reactor, system including reactors, and methods for depositing thin films on microfeature workpieces comprising a reaction vessel having a chamber, a gas distributor attached to the reaction vessel, a workpiece holder in the chamber, and a side unit in the reaction vessel at a location relative to the gas distributor and/or the workpiece holder. The gas distributor has a plurality of primary outlets open to the chamber, and the workpiece holder has a process site aligned with the primary outlets. The side unit has a secondary outlet open to the chamber that operates independently of the primary outlets. One of the inner compartment, the side unit and/or the workpiece holder can be movable between a first position to form a small-volume cell for introducing the reactant gases to the microfeature workpiece and a second position to form a large volume space for purging the reactant gases.

摘要翻译： 一种反应器，包括反应器的系统和用于在微型工件上沉积薄膜的方法，包括具有室的反应容器，附接到反应容器的气体分配器，室中的工件保持器，以及在反应容器中的侧部单元 相对于气体分配器和/或工件保持器的位置。 气体分配器具有多个通向腔室的主要出口，并且工件保持器具有与主出口对准的过程部位。 侧单元具有通向腔室的次级出口，其独立于主出口运行。 内部隔室，侧部单元和/或工件保持器中的一个可以在第一位置之间移动以形成用于将反应物气体引入微特征工件的小容积单元，以及形成用于清洗的大体积空间的第二位置 反应物气体。

公开(公告)号：US20050090069A1

公开(公告)日：2005-04-28

申请号：US10695959

申请日：2003-10-27

申请人： Matthew Miller ,  Cem Basceri

发明人： Matthew Miller ,  Cem Basceri

IPC分类号： H01L21/02 ,  H01L21/3115 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/8222

CPC分类号： H01L27/1085 ,  H01L21/31155 ,  H01L21/31625 ,  H01L28/60

摘要： A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

摘要翻译： 形成电容器的方法包括在半导体衬底上形成第一电容器电极。 电容器电介质区域形成在第一电容器电极上。 电容器介质区域具有暴露的氧化物容纳表面。 用至少一种硼烷或硅烷处理电容器电介质区域暴露的含氧化物表面。 第二电容器电极沉积在经处理的含氧化物表面上。 第二电容器电极具有与经处理的含氧化物表面接触的内金属表面。 考虑了其他方面和实现。

公开(公告)号：US20080090374A1

公开(公告)日：2008-04-17

申请号：US11954902

申请日：2007-12-12

申请人： Matthew Miller ,  Cem Basceri

发明人： Matthew Miller ,  Cem Basceri

IPC分类号： H01L21/283

CPC分类号： H01L27/1085 ,  H01L21/31155 ,  H01L21/31625 ,  H01L28/60

摘要： A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

公开(公告)号：US20060024903A1

公开(公告)日：2006-02-02

申请号：US11206334

申请日：2005-08-17

申请人： Matthew Miller ,  Cem Basceri

发明人： Matthew Miller ,  Cem Basceri

IPC分类号： H01L21/20

CPC分类号： H01L27/1085 ,  H01L21/31155 ,  H01L21/31625 ,  H01L28/60

摘要： A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.

摘要翻译： 形成电容器的方法包括在半导体衬底上形成第一电容器电极。 电容器电介质区域形成在第一电容器电极上。 电容器介质区域具有暴露的氧化物容纳表面。 用至少一种硼烷或硅烷处理电容器电介质区域暴露的含氧化物表面。 第二电容器电极沉积在经处理的含氧化物表面上。 第二电容器电极具有与经处理的含氧化物表面接触的内金属表面。 考虑了其他方面和实现。

公开(公告)号：US09269858B2

公开(公告)日：2016-02-23

申请号：US13223162

申请日：2011-08-31

申请人： Martin F. Schubert ,  Cem Basceri ,  Vladimir Odnoblyudov ,  Casey Kurth ,  Thomas Gehrke

发明人： Martin F. Schubert ,  Cem Basceri ,  Vladimir Odnoblyudov ,  Casey Kurth ,  Thomas Gehrke

IPC分类号： H01L29/04 ,  H01L21/00 ,  H01L33/02 ,  H01L33/00 ,  H01L33/16 ,  H01L33/46

CPC分类号： H01L33/0079 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/02 ,  H01L33/16 ,  H01L33/46

摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.

摘要翻译： 本文公开了用于半导体器件的工程衬底。 根据特定实施例的装置包括具有包括发射辐射有源区域的多个半导体材料的换能器结构。 所述装置还包括具有第一材料和第二材料的工程衬底，所述第一材料和所述第二材料中的至少一个具有与所述多个材料中的至少一个的热膨胀系数至少近似匹配的热膨胀系数 的半导体材料。 第一材料和第二材料中的至少一个被定位成接收来自有源区域的辐射并改变光的特性。

公开(公告)号：US20120276750A1

公开(公告)日：2012-11-01

申请号：US13541435

申请日：2012-07-03

申请人： Garo J. Derderian ,  Cem Basceri ,  Donald L. Westmoreland

发明人： Garo J. Derderian ,  Cem Basceri ,  Donald L. Westmoreland

IPC分类号： H01L21/31 ,  C22C14/00 ,  C01B35/04 ,  C01B21/076 ,  C01B33/06

CPC分类号： H01L29/06 ,  B01J20/3483 ,  B01J38/02 ,  C23C16/08 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4412 ,  H01L21/324 ,  H01L23/58 ,  H01L2924/0002 ,  Y10T428/31678 ,  H01L2924/00

摘要： A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.

摘要翻译： 提出了一种减少沉积的钛基薄膜内基于卤化物的污染的方法和装置。 在沉积工艺期间，在沉积室内利用卤化物吸附材料以除去卤化物，例如氯和氯化物，以使钛基膜的污染最小化。 还提供了一种再生卤化物吸附材料的方法。

公开(公告)号：US08207563B2

公开(公告)日：2012-06-26

申请号：US11638931

申请日：2006-12-13

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01L27/108

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

摘要： A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid pervious material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid pervious material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid pervious material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.

摘要翻译： 形成多个电容器的方法包括提供包括侧壁的多个电容器电极。 多个电容器电极至少部分地由与侧壁接合的保持结构支撑，保持结构包括透液材料。 电容器电介质材料沉积在电容器电极上，通过保持结构的流体可渗透材料，其有效地将电容器电介质材料沉积在容纳在保持结构下方的侧壁的部分上。 电容器电极材料通过保持结构的流体可透过材料沉积在电容器介电材料上，有效地将电容器电极材料沉积在容纳在保持结构下方的电容器电介质材料的至少一些之上。 还考虑了与制造方法无关的集成电路。

公开(公告)号：US20120120549A1

公开(公告)日：2012-05-17

申请号：US13293778

申请日：2011-11-10

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01G9/00

CPC分类号： H01L21/0228 ,  C23C16/029 ,  C23C16/18 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02183 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/40 ,  H01L28/60 ,  Y10T428/24917 ,  Y10T428/24926

摘要： An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.

摘要翻译： 界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层，所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。 包含第二化学元素的第二层可以形成在界面层上。 第一层可能基本上不包含第二化学元素，第二层可能基本上不含有第一化学元素，或两者都不包含。 装置可以包括含有第一化学元素的第一层，在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。 界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。

公开(公告)号：US20120056206A1

公开(公告)日：2012-03-08

申请号：US12874360

申请日：2010-09-02

申请人： Cem Basceri ,  Casey Kurth ,  Thomas Gehrke ,  Kevin Tetz

发明人： Cem Basceri ,  Casey Kurth ,  Thomas Gehrke ,  Kevin Tetz

IPC分类号： H01L33/08 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L33/02 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.

摘要翻译： 本文公开了固态照明管芯及其相关的制造方法。 在一个实施例中，固态照明管芯包括衬底材料，第一半导体材料，第二半导体材料以及第一和第二半导体材料之间的有源区。 第二半导体材料具有背离衬底材料的表面。 固态照明裸片还包括从第二半导体材料的表面向衬底材料延伸的多个开口。

公开(公告)号：USRE43025E1

公开(公告)日：2011-12-13

申请号：US12566533

申请日：2009-09-24

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： B32B9/00

CPC分类号： H01L21/0228 ,  C23C16/029 ,  C23C16/18 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02183 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/40 ,  H01L28/60 ,  Y10T29/417 ,  Y10T428/24917 ,  Y10T428/24926

摘要： An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element. A second layer comprising the second chemical element can be formed on the interface layer. The first layer might not substantially contain the second chemical element, the second layer might not substantially contain the first chemical element, or both. An apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer containing a second element on the interface layer. The interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.

摘要翻译： 界面形成方法包括在第一层上形成含有第一化学元素和化学吸附的第一层，所述界面层含有与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。 包含第二化学元素的第二层可以形成在界面层上。 第一层可能基本上不包含第二化学元素，第二层可能基本上不含有第一化学元素，或两者都不包含。 装置可以包括含有第一化学元素的第一层，在第一层上化学吸附的界面层和在界面层上含有第二元素的第二层。 界面层可以包含与第一化学元素不同的第二化学元素混合的第一化学元素的至少一个单层。