Invention Application
- Patent Title: Semiconductor device and a method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11116190Application Date: 2005-04-28
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Publication No.: US20060024906A1Publication Date: 2006-02-02
- Inventor: Kazuhide Abe
- Applicant: Kazuhide Abe
- Applicant Address: JP Minato-ku
- Assignee: Oki Electric Industry Co., Ltd.
- Current Assignee: Oki Electric Industry Co., Ltd.
- Current Assignee Address: JP Minato-ku
- Priority: JPJP2004-224357 20040730
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The present invention provides a semiconductor device, having: a semiconductor substrate; a first electrode formed over the semiconductor substrate; a first insulation film covering the first electrode and having an aperture for exposing a part of the first electrode; a first conductive film formed on a part of the first insulation film and the first electrode inside the aperture; an isolation region placed inside the aperture; and a second conductive film formed on the first conductive film and the isolation region.
Public/Granted literature
- US07465981B2 Semiconductor device and a method of manufacturing the same Public/Granted day:2008-12-16
Information query
IPC分类:
