发明申请
- 专利标题： Method of reducing the surface roughness of a semiconductor wafer
- 专利标题（中）： 降低半导体晶片的表面粗糙度的方法
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申请号： US11189899申请日： 2005-07-27
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公开(公告)号： US20060024908A1公开(公告)日： 2006-02-02
- 发明人: Eric Neyret , Ludovic Ecarnot , Emmanuel Arene
- 申请人： Eric Neyret , Ludovic Ecarnot , Emmanuel Arene
- 专利权人： S.I.O.TEC Silicon on Insulator Technologes S.A.
- 当前专利权人： S.I.O.TEC Silicon on Insulator Technologes S.A.
- 优先权： FR0108859 20010704
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.