公开(公告)号：US20060024908A1

公开(公告)日：2006-02-02

申请号：US11189899

申请日：2005-07-27

申请人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

发明人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

IPC分类号： H01L21/20

CPC分类号： H01L21/3247 ,  H01L21/302 ,  H01L21/324 ,  H01L21/76254

摘要： A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.

摘要翻译： 一种用于降低半导体晶片的自由表面的粗糙度的方法，其包括在退火室中建立第一气氛，用第二气氛代替第一气氛，所述第二气氛包括选择的量和基本上消除或减少污染物的量 晶片，并且将晶片的自由表面暴露于第二气氛以基本上消除或减少其上的污染物。 然后将第二气氛替换为包括纯的第三气氛，并且在退火室中暴露于第三气氛的晶片上进行快速热退火，以显着降低晶片的自由表面的粗糙度。

公开(公告)号：US07883628B2

公开(公告)日：2011-02-08

申请号：US11189899

申请日：2005-07-27

申请人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

发明人： Eric Neyret ,  Ludovic Ecarnot ,  Emmanuel Arene

IPC分类号： B44C1/22 ,  H01L21/302

CPC分类号： H01L21/3247 ,  H01L21/302 ,  H01L21/324 ,  H01L21/76254

摘要： A method for reducing the roughness of a free surface of a semiconductor wafer that includes establishing a first atmosphere in an annealing chamber, replacing the first atmosphere with a second atmosphere that includes a gas selected to and in an amount to substantially eliminate or reduce pollutants on a wafer, and exposing the free surface of the wafer to the second atmosphere to substantially eliminate or reduce pollutants thereon. The second atmosphere is then replaced with a third atmosphere that includes pure, and rapid thermal annealing is performed on the wafer exposed to the third atmosphere in the annealing chamber to substantially reduce the roughness of the free surface of the wafer.

摘要翻译： 一种用于降低半导体晶片的自由表面的粗糙度的方法，其包括在退火室中建立第一气氛，用第二气氛代替第一气氛，所述第二气氛包括选择的量和基本上消除或减少污染物的量 晶片，并且将晶片的自由表面暴露于第二气氛以基本上消除或减少其上的污染物。 然后将第二气氛替换为包括纯的第三气氛，并且在退火室中暴露于第三气氛的晶片上进行快速热退火，以显着降低晶片的自由表面的粗糙度。

公开(公告)号：US08173512B2

公开(公告)日：2012-05-08

申请号：US13080436

申请日：2011-04-05

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/76

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US20110217825A1

公开(公告)日：2011-09-08

申请号：US13080436

申请日：2011-04-05

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/762

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US20050277278A1

公开(公告)日：2005-12-15

申请号：US11004410

申请日：2004-12-03

申请人： Christophe Maleville ,  Emmanuel Arene

发明人： Christophe Maleville ,  Emmanuel Arene

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/302 ,  H01L39/24

CPC分类号： H01L21/02008 ,  C30B25/02 ,  C30B25/183

摘要： The present invention relates to a method of manufacturing a semiconductor wafer that includes providing a substrate of a single crystalline first material that has an unfinished or rough surface, and epitaxially growing at least one layer of a second material directly on the unfinished or rough surface of the first material. The second material has a lattice that is different from that of the first material and the epitaxial growing of the second material is advantageously performed before a final surface finishing step on the unfinished or rough surface of the substrate to increase bonding between the materials.

摘要翻译： 本发明涉及一种制造半导体晶片的方法，该方法包括提供具有未完成或粗糙表面的单晶第一材料的衬底，以及直接在至少一层第二材料的外表面生长第二材料的未完成或粗糙表面上 第一种材料。 第二材料具有不同于第一材料的晶格，并且有利的是在基片的未完成或粗糙表面上的最终表面精加工步骤之前进行第二材料的外延生长以增加材料之间的粘合。

公开(公告)号：US20100210090A1

公开(公告)日：2010-08-19

申请号：US12769299

申请日：2010-04-28

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/20

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对该结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US20060128117A1

公开(公告)日：2006-06-15

申请号：US11345495

申请日：2006-02-02

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/30

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.

摘要翻译： 描述了在衬底上形成松弛或假松弛有用层的方法。 该方法包括在施主衬底上生长应变半导体层，通过在某一粘度温度下变得粘稠的材料的玻璃质层将接收器衬底接合到应变半导体层以形成第一结构。 该方法还包括从第一结构分离施主衬底以形成包括接受衬底，玻璃体层和应变层的第二结构，然后在足够的温度和时间对第二结构进行热处理，以缓解应变中的应变 并且在接收器基板上形成松弛或假松弛的有用层。

公开(公告)号：US07919393B2

公开(公告)日：2011-04-05

申请号：US12769299

申请日：2010-04-28

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US07736988B2

公开(公告)日：2010-06-15

申请号：US11345495

申请日：2006-02-02

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/76 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.

摘要翻译： 描述了在衬底上形成松弛或假松弛有用层的方法。 该方法包括在施主衬底上生长应变半导体层，通过在某一粘度温度下变得粘稠的材料的玻璃质层将接收器衬底接合到应变半导体层以形成第一结构。 该方法还包括从第一结构分离施主衬底以形成包括接受衬底，玻璃体层和应变层的第二结构，然后在足够的温度和时间对第二结构进行热处理以使应变中的应变松弛 并且在接收器基板上形成松弛或假松弛的有用层。

公开(公告)号：US07018909B2

公开(公告)日：2006-03-28

申请号：US10784016

申请日：2004-02-20

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.

摘要翻译： 本发明涉及在衬底上形成松弛或假松弛层的方法，其中松弛层可以是半导体材料。 该方法的实现包括在施主衬底上生长弹性应力的半导体材料层，形成粘性材料的玻璃层并将其粘合到应力层，去除供体衬底的一部分以形成包括玻璃层的结构 ，应力层和供体衬底的表面层，然后在至少玻璃质层的粘度温度的温度下对结构进行热处理以使应力层松弛。 玻璃状层也可以结合到接收基板，从而可以将结构转移到其上。 实现也涉及从该方法获得的结构。