发明申请
- 专利标题: Semiconductor memory device and method for arranging and manufacturing the same
- 专利标题(中): 半导体存储器件及其制造方法
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申请号: US11191496申请日: 2005-07-28
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公开(公告)号: US20060028861A1公开(公告)日: 2006-02-09
- 发明人: Gong-Heum Han , Hyou-Youn Nam , Bo-Tak Lim , Han-Byung Park , Soon-Moon Jung , Hoon Lim
- 申请人: Gong-Heum Han , Hyou-Youn Nam , Bo-Tak Lim , Han-Byung Park , Soon-Moon Jung , Hoon Lim
- 优先权: KR2004-61527 20040804; KR2005-38621 20050509
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A semiconductor device and method for arranging and manufacturing the same are disclosed. The semiconductor device includes a plurality of inverters including at least one first pull-up transistor and first pull-down transistor and inverting and outputting an input signal, respectively; and a plurality of NAND gates including at least two second pull-up transistor and second pull-down transistor and generating an output signal having a high level if at least one of at least two input signals has a low level, respectively, wherein the at least one first pull-up transistor and first pull-down transistor and the at least two second pull-up transistor and second pull-down transistor are stacked and arranged on at least two layers.
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