发明申请
- 专利标题： Etchant solutions and methods of forming semiconductor devices formed by processes including the same
- 专利标题（中）： 蚀刻液的形成方法及其制造方法
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申请号： US11192700申请日： 2005-07-29
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公开(公告)号： US20060028865A1公开(公告)日： 2006-02-09
- 发明人: Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
- 申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2004-0061227 20040803
- 主分类号： G11C11/15
- IPC分类号： G11C11/15
摘要：
The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
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