发明申请
US20060028886A1 Control of set/reset pulse in response to peripheral temperature in PRAM device
有权
根据PRAM器件的外围温度控制置位/复位脉冲
- 专利标题: Control of set/reset pulse in response to peripheral temperature in PRAM device
- 专利标题(中): 根据PRAM器件的外围温度控制置位/复位脉冲
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申请号: US11124341申请日: 2005-05-06
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公开(公告)号: US20060028886A1公开(公告)日: 2006-02-09
- 发明人: Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
- 申请人: Byung-Gil Choi , Choong-Keun Kwak , Woo-Yeong Cho
- 优先权: KR2004-32501 20040805
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A drive circuit for a PRAM (phase-change random access memory) device includes a write driver that generates a set/reset current in response to a set/reset pulse. In addition, a temperature compensator controls a pulse width of the set/reset pulse in response to a peripheral temperature of the PRAM device. For example, the temperature compensator maintains the pulse width to be substantially constant irrespective of the peripheral temperature. In another example, the temperature compensator decreases the width for higher peripheral temperature.
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