发明申请
- 专利标题： Semiconductor memory device and method of manufacturing the same
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US10959223申请日： 2004-10-07
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公开(公告)号： US20060030110A1公开(公告)日： 2006-02-09
- 发明人: Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki
- 申请人： Yoshinori Kumura , Iwao Kunishima , Tohru Ozaki
- 优先权： JP2004-228359 20040804
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.
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