公开(公告)号：US07573084B2

公开(公告)日：2009-08-11

申请号：US11898949

申请日：2007-09-18

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括堆叠第一电极，铁电体膜和第二电极的铁电电容器，具有氢阻挡性能的第一保护膜， 第一保护膜形成在第一电极下方和铁电电容器的侧壁上，第一保护膜从第二电极朝向第一电极加宽，具有氢阻挡性能的第二保护膜，形成第二保护膜 在第二电极上以及形成在铁电电容器的侧壁上的第一保护膜上，第二保护膜从第一电极朝向第二电极加宽，单元晶体管，单元晶体管的源极连接到 第一电极，单元晶体管的漏极连接到位线，栅极连接到aw ord行。

公开(公告)号：US20080230818A1

公开(公告)日：2008-09-25

申请号：US12053137

申请日：2008-03-21

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a non-volatile memory including: a transistor formed on a semiconductor substrate, the transistor including: two diffusion layers and a gate therebetween; a first insulating film formed on a top and a side surfaces of the gate; a first and a second contact plugs formed on corresponding one of the diffusion layers to contact the first insulating film; a ferroelectric capacitor formed on the first contact plug and on the first insulating film, the ferroelectric capacitor including: a first and a second electrodes and a ferroelectric film therebetween; a third contact plug formed on the second electrode; and a fourth contact plug formed on the second contact plug.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性存储器，包括：形成在半导体衬底上的晶体管，所述晶体管包括：两个扩散层和栅极; 形成在栅极的顶部和侧表面上的第一绝缘膜; 第一和第二接触塞形成在相应的一个扩散层上以接触第一绝缘膜; 形成在所述第一接触插塞和所述第一绝缘膜上的强电介质电容器，所述强电介质电容器包括：第一和第二电极及其间的铁电体膜; 形成在所述第二电极上的第三接触插塞; 以及形成在所述第二接触插塞上的第四接触插塞。

公开(公告)号：US20080173912A1

公开(公告)日：2008-07-24

申请号：US11941291

申请日：2007-11-16

申请人： Yoshinori KUMURA ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori KUMURA ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US20080073682A1

公开(公告)日：2008-03-27

申请号：US11898949

申请日：2007-09-18

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： According to an aspect of the present invention, there is provided a non-volatile semiconductor memory device, including a ferroelectric capacitor being stacked a first electrode, a ferroelectric film and a second electrode in order, a first protective film with hydrogen barrier performance, the first protective film being formed under the first electrode and on a side-wall of the ferroelectric capacitor, the first protective film being widened from the second electrode towards the first electrode, a second protective film with hydrogen barrier performance, the second protective film being formed over the second electrode and on the first protective film formed on the side-wall of the ferroelectric capacitor, the second protective film being widened from the first electrode towards the second electrode, a cell transistor, a source of the cell transistor being connected to the first electrode, a drain of the cell transistor being connected to a bit line and a gate being connected to a word line.

摘要翻译： 根据本发明的一个方面，提供了一种非易失性半导体存储器件，包括堆叠第一电极，铁电体膜和第二电极的铁电电容器，具有氢阻挡性能的第一保护膜， 第一保护膜形成在第一电极下方和铁电电容器的侧壁上，第一保护膜从第二电极朝向第一电极加宽，具有氢阻挡性能的第二保护膜，形成第二保护膜 在第二电极上以及形成在铁电电容器的侧壁上的第一保护膜上，第二保护膜从第一电极朝向第二电极加宽，单元晶体管，单元晶体管的源极连接到 第一电极，单元晶体管的漏极连接到位线，栅极连接到aw ord行。

公开(公告)号：US07214982B2

公开(公告)日：2007-05-08

申请号：US10959223

申请日：2004-10-07

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： H01L27/108

CPC分类号： H01L29/945 ,  H01L27/11502 ,  H01L27/11507 ,  H01L29/66181

摘要： A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.

摘要翻译： 包括具有适于小型化并易于制造并且对材料使用限制较少的结构的铁电随机存取存储器的半导体器件包括形成在半导体晶片的表面区域上的场效应晶体管，沟槽铁电体 电容器形成在场效应晶体管的一个源极/漏极中的半导体晶片中，其中一个电极连接到源极/漏极，以及形成在半导体晶片中并连接到沟槽铁电电容器的另一个电极的布线。

公开(公告)号：US20070045687A1

公开(公告)日：2007-03-01

申请号：US11288204

申请日：2005-11-29

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US07348617B2

公开(公告)日：2008-03-25

申请号：US11288204

申请日：2005-11-29

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Susumu Shuto ,  Yoshiro Shimojo ,  Iwao Kunishima

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconductor substrate, a ferroelectric capacitor formed above the transistor and comprising a lower electrode, a ferroelectric film and an upper electrode, a first hydrogen barrier film formed over the ferroelectric capacitor, an insulator formed over the first hydrogen barrier film, a contact plug disposed in the insulator and electrically connected with the upper electrode, a second hydrogen barrier film disposed between the contact plug and the insulator continuously, and a wiring connected with the contact plug.

摘要翻译： 公开了一种包括具有改善的可靠性的铁电电容器的半导体器件。 根据本发明的一个方面，提供了一种半导体器件，包括形成在半导体衬底上的晶体管，形成在晶体管上方的铁电电容器，包括下电极，铁电体膜和上电极，第一氢阻挡膜 形成在所述铁电电容器上，形成在所述第一氢阻挡膜上的绝缘体，设置在所述绝缘体中并与所述上电极电连接的接触插塞，连续地配置在所述接触插塞和所述绝缘体之间的第二氢阻挡膜， 与接触插头。

公开(公告)号：US20080061335A1

公开(公告)日：2008-03-13

申请号：US11898297

申请日：2007-09-11

申请人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

发明人： Yoshinori Kumura ,  Tohru Ozaki ,  Iwao Kunishima

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor memory including a lower electrode, a first insulating region formed in the same layer as the lower electrode, a ferroelectric film formed on the lower electrode and on the first insulating region, an upper electrode formed on the ferroelectric film, a second insulating region formed in the same layer as the upper electrode and a transistor. The first insulating region partitions the lower electrode. The second insulating region partitions the upper electrode. The transistor includes a first impurity region connected to the lower electrode and a second impurity region connected to the upper electrode. At least one of the first insulating region and the second insulating region is formed by insulating the lower electrode or the upper electrode.

摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器，包括下电极，与下电极形成在同一层中的第一绝缘区域，形成在下电极和第一绝缘区上的强电介质膜， 形成在强电介质膜上的上电极，形成在与上电极相同的层中的第二绝缘区域和晶体管。 第一绝缘区域分隔下电极。 第二绝缘区域分隔上电极。 晶体管包括连接到下电极的第一杂质区和连接到上电极的第二杂质区。 通过使下部电极或上部电极绝缘来形成第一绝缘区域和第二绝缘区域中的至少一个。

公开(公告)号：US20060030110A1

公开(公告)日：2006-02-09

申请号：US10959223

申请日：2004-10-07

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： H01L21/336

CPC分类号： H01L29/945 ,  H01L27/11502 ,  H01L27/11507 ,  H01L29/66181

摘要： A semiconductor device including a ferroelectric random access memory, which has a structure suitable for miniaturization and easy to manufacture, and having less restrictions on materials to be used, comprises a field effect transistor formed on a surface area of a semiconductor wafer, a trench ferroelectric capacitor formed in the semiconductor wafer in one source/drain of the field effect transistor, wherein one electrode thereof is connected to the source/drain, and a wiring formed in the semiconductor wafer and connected to the other electrode of the trench ferroelectric capacitor.

摘要翻译： 包括具有适于小型化和易于制造的结构并且对材料的限制较少的铁电随机存取存储器的半导体器件包括形成在半导体晶片的表面区域上的场效应晶体管，沟槽铁电体 电容器形成在场效应晶体管的一个源极/漏极中的半导体晶片中，其中一个电极连接到源极/漏极，以及形成在半导体晶片中并连接到沟槽铁电电容器的另一个电极的布线。

公开(公告)号：US20060002170A1

公开(公告)日：2006-01-05

申请号：US10931193

申请日：2004-09-01

申请人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

发明人： Yoshinori Kumura ,  Yoshiro Shimojo ,  Iwao Kunishima ,  Tohru Ozaki

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.