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Invention Application
US20060033105A1 Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manafacturing method of liquid crystal display apparatus 失效
薄膜晶体管，液晶显示装置，薄膜​​晶体管的制造方法以及液晶显示装置的制造方法

  • Patent Title: Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manafacturing method of liquid crystal display apparatus
  • Patent Title (中): 薄膜晶体管，液晶显示装置，薄膜​​晶体管的制造方法以及液晶显示装置的制造方法
  • Application No.: US10524465
    Application Date: 2003-07-23
  • Publication No.: US20060033105A1
    Publication Date: 2006-02-16
  • Inventor: Akiyoshi Fujii , Takaya Nakabayashi
  • Applicant: Akiyoshi Fujii , Takaya Nakabayashi
  • Priority: JP2002-255568 20020830
  • International Application: PCT/JP03/09361 WO 20030723
  • Main IPC: H01L29/786
  • IPC: H01L29/786 ;  H01L21/84
Thin film transistor, liquid crystal display apparatus, manufacturing method of thin film transistor, and manafacturing method of liquid crystal display apparatus
Abstract:
A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.
Abstract(Chinese):

本发明的薄膜晶体管的制造方法包括以下步骤：（i）通过施加电极原料的液滴形成电极形成区域，其中形成源电极和漏电极，（ii）将 电极原料的液滴在位于半导体层的形成区域和电极形成区域的下降位置上，以及（iii）在电极形成区域中形成源电极和漏电极。 通过这种布置，可以通过施加电极原料的液滴来确保在形成源电极和漏极之间的每个电极之间的通道部分上的飞溅液滴的附着。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/786 ......薄膜晶体管
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