公开(公告)号：US20080129910A1

公开(公告)日：2008-06-05

申请号：US12003608

申请日：2007-12-28

申请人： Akiyoshi Fujii ,  Takaya Nakabayashi

发明人： Akiyoshi Fujii ,  Takaya Nakabayashi

IPC分类号： G02F1/136 ,  H01L29/786

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  H01L29/41733 ,  H01L29/41758

摘要： A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.

摘要翻译： 本发明的薄膜晶体管的制造方法包括以下步骤：（i）通过施加电极原料的液滴形成电极形成区域，其中形成源电极和漏电极，（ii）将 电极原料的液滴在位于半导体层的形成区域和电极形成区域的下降位置上，以及（iii）在电极形成区域中形成源电极和漏电极。 通过这种布置，可以通过施加电极原料的液滴来确保在形成源电极和漏极之间的每个电极之间的通道部分上的飞溅液滴的附着。

公开(公告)号：US20050242394A1

公开(公告)日：2005-11-03

申请号：US10525901

申请日：2003-06-05

申请人： Takaya Nakabayashi ,  Akiyoshi Fujii

发明人： Takaya Nakabayashi ,  Akiyoshi Fujii

IPC分类号： B41J2/01 ,  B41J2/16 ,  B81B1/00 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L29/786 ,  H05K3/10 ,  H05K3/12 ,  H01L27/01

CPC分类号： B81C1/0046 ,  B41J2/1606 ,  H01L21/288 ,  H01L21/76838 ,  H05K3/1241

摘要： A pattern formation substrate comprising a substrate having thereon a hydrophobic region exhibiting repellency to liquid drops and a hydrophilic line exhibiting affinity with liquid drops. The hydrophilic line has such a surface treatment that upon landing of a liquid drop thereon, the liquid drop moves in the arrowed direction. Thus, attachment of liquid drops to regions to which liquid drops should not be adhered can be prevented, thereby enabling forming a pattern of desired characteristics.

摘要翻译： 一种图案形成衬底，包括其上具有对液滴具有排斥性的疏水性区域的基底和与液滴呈亲和性的亲水性线。 亲水线具有这样的表面处理，即在其上的液滴着落时，液滴沿箭头方向移动。 因此，可以防止将液滴附着到不会粘附到液滴的区域，从而能够形成所需特性的图案。

公开(公告)号：US5862021A

公开(公告)日：1999-01-19

申请号：US874790

申请日：1997-06-13

申请人： Haruhiko Deguchi ,  Takaya Nakabayashi ,  Tomohisa Komoda ,  Tohru Kira ,  Noboru Fujita ,  Kazuhiro Uneyama

发明人： Haruhiko Deguchi ,  Takaya Nakabayashi ,  Tomohisa Komoda ,  Tohru Kira ,  Noboru Fujita ,  Kazuhiro Uneyama

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  G11B5/3906 ,  H01F10/3268 ,  H01L43/08

摘要： A magnetoresistive effect device is formed by layering a nonmagnetic Co oxide film, a pinned magnetization layer made of Co, a nonmagnetic layer made of Cu, a free magnetization layer made of NiFe in this order on a substrate made of glass or Si. By arranging the nonmagnetic Co oxide film in contact with the pinned magnetization layer, it is possible to produce a magnetoresistive effect device with a high saturation field and a high sensitivity.

摘要翻译： 通过在由玻璃或Si制成的衬底上依次层叠非磁性Co氧化膜，由Co制成的钉扎磁化层，由Cu制成的非磁性层，由NiFe制成的自由磁化层，形成磁阻效应器件。 通过使非磁性Co氧化膜与被钉扎的磁化层接触，可以制造出具有高饱和场和高灵敏度的磁阻效应器件。

公开(公告)号：US07501156B2

公开(公告)日：2009-03-10

申请号：US10525901

申请日：2003-06-05

申请人： Takaya Nakabayashi ,  Akiyoshi Fujii

发明人： Takaya Nakabayashi ,  Akiyoshi Fujii

IPC分类号： B05D5/00 ,  G03F1/00 ,  B41J2/01 ,  H01L21/44

CPC分类号： B81C1/0046 ,  B41J2/1606 ,  H01L21/288 ,  H01L21/76838 ,  H05K3/1241

摘要： A pattern formation substrate comprising a substrate having thereon a hydrophobic region exhibiting repellency to liquid drops and a hydrophilic line exhibiting affinity with liquid drops. The hydrophilic line has such a surface treatment that upon landing of a liquid drop thereon, the liquid drop moves in the arrowed direction. Thus, attachment of liquid drops to regions to which liquid drops should not be adhered can be prevented, thereby enabling forming a pattern of desired characteristics.

摘要翻译： 一种图案形成衬底，包括其上具有对液滴具有排斥性的疏水性区域的基底和与液滴呈亲和性的亲水性线。 亲水线具有这样的表面处理，即在其上的液滴着落时，液滴沿箭头方向移动。 因此，可以防止将液滴附着到不会粘附到液滴的区域，从而能够形成所需特性的图案。

公开(公告)号：US20060033105A1

公开(公告)日：2006-02-16

申请号：US10524465

申请日：2003-07-23

申请人： Akiyoshi Fujii ,  Takaya Nakabayashi

发明人： Akiyoshi Fujii ,  Takaya Nakabayashi

IPC分类号： H01L29/786 ,  H01L21/84

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  H01L29/41733 ,  H01L29/41758

摘要： A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.

摘要翻译： 本发明的薄膜晶体管的制造方法包括以下步骤：（i）通过施加电极原料的液滴形成电极形成区域，其中形成源电极和漏电极，（ii）将 电极原料的液滴在位于半导体层的形成区域和电极形成区域的下降位置上，以及（iii）在电极形成区域中形成源电极和漏电极。 通过这种布置，可以通过施加电极原料的液滴来确保在形成源电极和漏极之间的每个电极之间的通道部分上的飞溅液滴的附着。

公开(公告)号：US20050245079A1

公开(公告)日：2005-11-03

申请号：US10525614

申请日：2003-06-05

申请人： Mitsuru Honda ,  Takaya Nakabayashi ,  Akiyoshi Fujii

发明人： Mitsuru Honda ,  Takaya Nakabayashi ,  Akiyoshi Fujii

IPC分类号： B41J2/01 ,  B05D1/26 ,  B41J2/14 ,  B41J2/16 ,  G02F1/1343 ,  H01J9/02 ,  H01L21/288 ,  H01L29/786 ,  H05K3/12 ,  H01L21/44

CPC分类号： B41J2/1606 ,  B41J2/1433 ,  H05K3/1241

摘要： A pattern forming method of the present invention includes the steps of forming, on a substrate before droplets are ejected onto the substrate, a water repelling area, in which a contact angle between the droplet and the target surface is a first contact angle, and a water attracting line, which is adjacent to the water repelling area and in which a second contact angle is smaller than the first contact angle and which is to be the pattern to be formed; and landing droplets onto the target surface such that part of the droplet landed is in a water repelling area and part of the droplet landed is in a water attracting line, the equation (1) is satisfied, D≦Lx{1+2(cos θ2−cos θ1)}  (1) where D is a droplet diameter, L is a pattern width, θ1 is a first contact angle, and θ2 is a second contact angle. By decreasing the number of discharged droplets, it is possible to prevent increase of a tact time and decrease of an inkjet operating life.

摘要翻译： 本发明的图案形成方法包括以下步骤：在将液滴喷射到基板上之前，在基板上形成防滴漏区域，其中液滴和目标表面之间的接触角为第一接触角，以及 吸水线，其与防水区域相邻，并且第二接触角小于第一接触角，并且是要形成的图案; 并将液滴落在目标表面上，使得一部分液滴落在排水区域中，一部分液滴落在吸水线中，满足方程（1），<？在线公式描述= “In-line Formulas”end =“lead”？> D <= LX {1 + 2（cosθ＆lt; 2＆gt;-cosθ＆lt; 1＆gt;}}（1） 在线公式描述=“在线公式”end =“tail”？>其中D是液滴直径，L是图案宽度，θ<1>是第一接触角，θ 2 是第二接触角。 通过减少排出的液滴的数量，可以防止节拍时间的增加和喷墨操作寿命的降低。

公开(公告)号：US06475278B2

公开(公告)日：2002-11-05

申请号：US09773571

申请日：2001-02-02

申请人： Takaya Nakabayashi ,  Shuji Makino

发明人： Takaya Nakabayashi ,  Shuji Makino

IPC分类号： C30B3500

CPC分类号： C30B23/066 ,  Y10S117/90 ,  Y10T117/10

摘要： A molecular beam source comprising a crucible having an opening, and a heater mounted to the crucible for evaporating by heating a molecular beam generating material accommodated in the crucible to emit a molecular beam from the opening, wherein the crucible has an accommodating section for accommodating the molecular beam generating material, a bent portion provided between the opening and the accommodating section so that the molecular beam generating material accommodated in the accommodating section does not face the opening directly, and a narrowed portion between the bent portion and the opening.

摘要翻译： 一种分子束源，包括具有开口的坩埚和安装在所述坩埚上的加热器，用于通过加热容纳在所述坩埚中的分子束产生材料来蒸发以从所述开口发射分子束，其中所述坩埚具有用于容纳所述坩埚的容纳部分 分子束发生材料，设置在开口和容纳部分之间的弯曲部分，使得容纳在容纳部分中的分子束产生材料不直接面对开口，以及弯曲部分和开口之间的变窄部分。

公开(公告)号：US07342288B2

公开(公告)日：2008-03-11

申请号：US10524465

申请日：2003-07-23

申请人： Akiyoshi Fujii ,  Takaya Nakabayashi

发明人： Akiyoshi Fujii ,  Takaya Nakabayashi

IPC分类号： H01L29/417

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  H01L29/41733 ,  H01L29/41758

摘要： A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.

公开(公告)号：US07119026B2

公开(公告)日：2006-10-10

申请号：US10525614

申请日：2003-06-05

申请人： Mitsuru Honda ,  Takaya Nakabayashi ,  Akiyoshi Fujii

发明人： Mitsuru Honda ,  Takaya Nakabayashi ,  Akiyoshi Fujii

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： B41J2/1606 ,  B41J2/1433 ,  H05K3/1241

摘要： A pattern forming method of the present invention includes the steps of forming, on a substrate before droplets are ejected onto the substrate, a water repelling area, in which a contact angle between the droplet and the target surface is a first contact angle, and a water attracting line, which is adjacent to the water repelling area and in which a second contact angle is smaller than the first contact angle and which is to be the pattern to be formed; and landing droplets onto the target surface such that part of the droplet landed is in a water repelling area and part of the droplet landed is in a water attracting line, the equation (1) is satisfied, D≦L×{1+2(cos θ2−cos θ1)}  (1) where D is a droplet diameter, L is a pattern width, θ1 is a first contact angle, and θ2 is a second contact angle. By decreasing the number of discharged droplets, it is possible to prevent increase of a tact time and decrease of an inkjet operating life.

摘要翻译： 本发明的图案形成方法包括以下步骤：在将液滴喷射到基板上之前，在基板上形成防滴漏区域，其中液滴和目标表面之间的接触角为第一接触角，以及 吸水线，其与防水区域相邻，并且第二接触角小于第一接触角，并且是要形成的图案; 并将液滴落在目标表面上，使得一部分液滴落在排水区域中，一部分液滴落在吸水线中，满足方程（1），<？在线公式描述= “In-line Formulas”end =“lead”？> D <= Lx {1 + 2（cosθ＆lt; 2＆gt;-cosθ＆lt; 1＆gt;）}（1） 在线公式描述=“在线公式”end =“tail”？>其中D是液滴直径，L是图案宽度，θ<1>是第一接触角，θ 2 是第二接触角。 通过减少排出的液滴的数量，可以防止节拍时间的增加和喷墨操作寿命的降低。

公开(公告)号：US20060086937A1

公开(公告)日：2006-04-27

申请号：US10526009

申请日：2003-08-29

申请人： Akiyoshi Fujii ,  Takaya Nakabayashi ,  Hisao Ochi ,  Takaeshi Hara ,  Yuhichi Saitoh

发明人： Akiyoshi Fujii ,  Takaya Nakabayashi ,  Hisao Ochi ,  Takaeshi Hara ,  Yuhichi Saitoh

IPC分类号： H01L29/04

CPC分类号： H01L27/1292 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/78633 ,  H01L29/78696

摘要： A TFT array substrate includes a thin film transistor section in which a gate electrode is formed on a substrate, and a semiconductor layer is formed on the gate electrode via a gate insulation layer. The semiconductor layer of this TFT array substrate has a shape formed by dropping a droplet. Accordingly, it is possible to directly forming a semiconductor layer, or a resist layer for forming the semiconductor layer, by dropping a droplet(s). On this account, the present invention allows the use of an inkjet method, thus reducing costs and numbers of manufacturing processes.

摘要翻译： TFT阵列基板包括薄膜晶体管部分，其中栅电极形成在基板上，半导体层经栅极绝缘层形成在栅电极上。 该TFT阵列基板的半导体层具有通过滴下液滴形成的形状。 因此，可以通过滴下液滴直接形成半导体层或用于形成半导体层的抗蚀剂层。 因此，本发明允许使用喷墨方法，从而降低制造工艺的成本和数量。