发明申请
- 专利标题： P-channel electrically alterable non-volatile memory cell
- 专利标题（中）： P沟道电可变非易失性存储单元
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申请号： US10962288申请日： 2004-10-08
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公开(公告)号： US20060033146A1公开(公告)日： 2006-02-16
- 发明人: Chih-Hsin Wang
- 申请人： Chih-Hsin Wang
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A nonvolatile memory cell is provided. The memory cell comprises a storage transistor and an injector in a semiconductor substrate of a p-type conductivity. The injector comprises a first region of the p-type conductivity and a second region of an n-type conductivity. The storage transistor comprises a source, a drain, a channel, a charge storage region, and a control gate. The source and the drain have the p-type conductivity and are formed in a well of the n-type conductivity in the substrate with the channel of the well defined therebetween. The charge storage region is disposed over and insulated from the channel by a first insulator. The control gate is disposed over and insulated from the charge storage region by a second insulator. Further provided are methods operating the memory cell, including means for injecting electrons from the channel through the first insulator onto the charge storage region and means for injecting holes from the injector through the well through the channel through the first insulator onto the charge storage region.
公开/授权文献
- US07180125B2 P-channel electrically alterable non-volatile memory cell 公开/授权日：2007-02-20
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