发明申请
- 专利标题： Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
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申请号： US11249883申请日： 2005-10-12
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公开(公告)号： US20060035390A1公开(公告)日： 2006-02-16
- 发明人: Tingkai Li , Sheng Hsu
- 申请人： Tingkai Li , Sheng Hsu
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; depositing a top layer of ferroelectric material on the seed layer at a relatively low temperature; and annealing the substrate, the high-k layer and the ferroelectric layers to form a ferroelectric thin film.
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