发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11245089申请日： 2005-10-07
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公开(公告)号： US20060035427A1公开(公告)日： 2006-02-16
- 发明人: Hiroshi Kudo , Junko Naganuma , Sadahiro Kishii
- 申请人： Hiroshi Kudo , Junko Naganuma , Sadahiro Kishii
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2003-005395 20030114
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrode 22n and a dummy electrode 22p; forming a metal film 32 on the dummy electrode 22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode 22n with an electrode 34a of a material containing the constituent material of the metal film 32; forming a metal film 36 on the dummy electrode 22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode 34a and the metal film 36 does not take place, to substitute the second dummy electrode with an electrode 34b of a material containing the constituent material of the metal film 36.
公开/授权文献
- US07642577B2 Semiconductor device and method for fabricating the same 公开/授权日：2010-01-05
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