公开(公告)号：US07064038B2

公开(公告)日：2006-06-20

申请号：US10754577

申请日：2004-01-12

申请人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

发明人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

IPC分类号： H01L21/336 ,  H01L21/338 ,  H01L21/337 ,  H01L21/44

CPC分类号： H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606

摘要： The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrode 22n and a dummy electrode 22p; forming a metal film 32 on the dummy electrode 22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode 22n with an electrode 34a of a material containing the constituent material of the metal film 32; forming a metal film 36 on the dummy electrode 22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode 34a and the metal film 36 does not take place, to substitute the second dummy electrode with an electrode 34b of a material containing the constituent material of the metal film 36.

公开(公告)号：US07642577B2

公开(公告)日：2010-01-05

申请号：US11245089

申请日：2005-10-07

申请人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

发明人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606

摘要： The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrode 22n and a dummy electrode 22p; forming a metal film 32 on the dummy electrode 22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode 22n with an electrode 34a of a material containing the constituent material of the metal film 32; forming a metal film 36 on the dummy electrode 22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode 34a and the metal film 36 does not take place, to substitute the second dummy electrode with an electrode 34b of a material containing the constituent material of the metal film 36.

摘要翻译： 制造半导体器件的方法包括以下步骤：形成虚设电极22n和虚拟电极22p; 在虚拟电极22p上形成金属膜32; 在第一温度进行热处理以用包含金属膜32的构成材料的材料的电极34a代替虚设电极22n; 在虚拟电极22n上形成金属膜36; 并且在低于第一温度的第二温度下进行热处理，并且在电极34a与金属膜36之间的构成材料不发生相互扩散的情况下，用第二虚拟电极用电极34b 含有金属膜36的构成材料的材料。

公开(公告)号：US20060035427A1

公开(公告)日：2006-02-16

申请号：US11245089

申请日：2005-10-07

申请人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

发明人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

IPC分类号： H01L21/8238

CPC分类号： H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606

摘要： The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrode 22n and a dummy electrode 22p; forming a metal film 32 on the dummy electrode 22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode 22n with an electrode 34a of a material containing the constituent material of the metal film 32; forming a metal film 36 on the dummy electrode 22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode 34a and the metal film 36 does not take place, to substitute the second dummy electrode with an electrode 34b of a material containing the constituent material of the metal film 36.

摘要翻译： 制造半导体器件的方法包括以下步骤：形成虚拟电极22 n和虚拟电极22 p; 在虚拟电极22 p上形成金属膜32; 在第一温度下进行热处理以用包含金属膜32的构成材料的材料的电极34a替代虚拟电极22 n; 在虚拟电极22 n上形成金属膜36; 并且在低于第一温度的第二温度下进行热处理，并且在电极34a和金属膜36之间的组成材料不发生相互扩散的情况下用电极34代替第二虚拟电极 b包含金属膜36的构成材料的材料。

公开(公告)号：US08067791B2

公开(公告)日：2011-11-29

申请号：US12621106

申请日：2009-11-18

申请人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

发明人： Hiroshi Kudo ,  Junko Naganuma ,  Sadahiro Kishii

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L21/823835 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/66606

摘要： A semiconductor device formed by the steps of: forming a dummy electrode 22n and a dummy electrode 22p; forming a metal film 32 on the dummy electrode 22p; conducting a thermal treatment at a first temperature to substitute the dummy electrode 22n with an electrode 34a of a material containing the constituent material of the metal film 32; forming a metal film 36 on the dummy electrode 22n; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrode 34a and the metal film 36 does not take place, to substitute the second dummy electrode with an electrode 34b of a material containing the constituent material of the metal film 36.

摘要翻译： 一种半导体器件，通过以下步骤形成：形成虚拟电极22n和虚拟电极22p; 在虚拟电极22p上形成金属膜32; 在第一温度进行热处理以用包含金属膜32的构成材料的材料的电极34a代替虚设电极22n; 在虚拟电极22n上形成金属膜36; 并且在低于第一温度的第二温度下进行热处理，并且在电极34a与金属膜36之间的构成材料不发生相互扩散的情况下，用第二虚拟电极用电极34b 含有金属膜36的构成材料的材料。