发明申请
US20060035450A1 Semiconductor-dielectric-semiconductor device structure fabricated by wafer bonding
有权
通过晶片接合制造的半导体 - 电介质半导体器件结构
- 专利标题: Semiconductor-dielectric-semiconductor device structure fabricated by wafer bonding
- 专利标题(中): 通过晶片接合制造的半导体 - 电介质半导体器件结构
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申请号: US10917055申请日: 2004-08-12
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公开(公告)号: US20060035450A1公开(公告)日: 2006-02-16
- 发明人: Martin Frank , Alexander Reznicek , Evgeni Gousev , Eduard Cartier
- 申请人: Martin Frank , Alexander Reznicek , Evgeni Gousev , Eduard Cartier
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/4763
摘要:
A method of forming a gate stack for semiconductor electronic devices utilizing wafer bonding of at least one structure containing a high-k dielectric material is provided. The method of the present invention includes a step of first selecting a first and second structure having a major surface respectively. In accordance with the present invention, at least one, or both, of the first and second structures includes at least a high-k dielectric material. Next, the major surfaces of the first and second structures are bonded together to provide a bonded structure containing at least the high-k dielectric material of a gate stack.