发明申请
US20060037251A1 Polishing medium for chemical-mechanical polishing, and method of polishing substrate member 有权
用于化学机械抛光的抛光介质,以及抛光衬底构件的方法

Polishing medium for chemical-mechanical polishing, and method of polishing substrate member
摘要:
This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.
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