公开(公告)号：US08999281B2

公开(公告)日：2015-04-07

申请号：US12130179

申请日：2008-05-30

申请人： Yasushi Kurata ,  Naoaki Shimura ,  Tatsuya Usui

发明人： Yasushi Kurata ,  Naoaki Shimura ,  Tatsuya Usui

IPC分类号： C01F17/00 ,  C30B29/22 ,  C30B15/00 ,  C30B33/02 ,  C09K11/77

CPC分类号： C30B29/22 ,  C01F17/00 ,  C09K11/7774 ,  C30B15/00 ,  C30B33/02

摘要： The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following general formula (1). The scintillator single crystal of the invention exhibits improved scintillation properties by reduced segregation between elements in the crystal ingot. Lm2−(x+y+z)LnxLuyCezSiO5  (1) (Wherein Lm represents at least one element selected from among Sc and Y and lanthanoid elements with lower atomic numbers than Lu, Ln represents at least one element selected from among Sc, Y, B, Al, Ga and In and lanthanoid elements with ion radii intermediate between Lm and Lu, x represents a value of greater than zero and no greater than 0.5, y represents a value of greater than 1 and less than 2, and z represents a value of greater than zero and no greater than 0.1.).

摘要翻译： 本发明的闪烁体单晶包含由以下通式（1）表示的铈活化的原硅酸盐化合物。 本发明的闪烁体单晶通过降低晶锭中的元素之间的偏析来显示改善的闪烁特性。 Lm2-（x + y + z）LnxLuyCezSiO5（1）（其中Lm表示选自Sc和Y中的至少一种元素，原子序数低于Lu的镧系元素，Ln表示选自Sc，Y， B，Al，Ga和In以及离子半径在Lm和Lu之间的镧系元素，x表示大于零且不大于0.5的值，y表示大于1且小于2的值，z表示 值大于零且不大于0.1）。

公开(公告)号：US08137159B2

公开(公告)日：2012-03-20

申请号：US13217447

申请日：2011-08-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

公开(公告)号：US07871308B2

公开(公告)日：2011-01-18

申请号：US11484611

申请日：2006-07-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00 ,  C09C1/68

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US20100327227A1

公开(公告)日：2010-12-30

申请号：US12822679

申请日：2010-06-24

申请人： Yasushi Kurata ,  Tatsuya Usui ,  Naoaki Shimura

发明人： Yasushi Kurata ,  Tatsuya Usui ,  Naoaki Shimura

IPC分类号： C09K11/79

CPC分类号： C09K11/7792 ,  C30B15/00 ,  C30B29/34 ,  C30B33/02

摘要： The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following formula (1). Gd2−(a+x+y+z)LnaLuxCeyLmzSiO5  (1) (In formula (1), Lm represents at least one element selected from among Pr, Tb and Tm, Ln represents at least one element selected from among lanthanoid elements excluding Pr, Tb and Tm, and Sc, and Y, a represents a value of at least 0 and less than 1, x represents a value of greater than 1 and less than 2, y represents a value of greater than 0 and no greater than 0.01, and z represents a value of greater than 0 and no greater than 0.01. The value of a+x+y+z is no greater than 2.)

摘要翻译： 本发明的闪烁体单晶包含由下式（1）表示的铈活化的原硅酸盐化合物。 Gd 2 - （a + x + y + z）LnaLuxCeyLmzSiO5（1）（式（1）中，Lm表示选自Pr，Tb和Tm中的至少一种元素，Ln表示选自除Pr之外的镧系元素中的至少一种元素 ，Tb和Tm，Sc和Y，a表示至少为0且小于1的值，x表示大于1且小于2的值，y表示大于0且不大于0.01的值 ，z表示大于0且不大于0.01的值，a + x + y + z的值不大于2.）

公开(公告)号：US07744666B2

公开(公告)日：2010-06-29

申请号：US11201242

申请日：2005-08-11

申请人： Yasushi Kurata ,  Yasuo Kamigata ,  Takeshi Uchida ,  Hiroki Terasaki ,  Akiko Igarashi

发明人： Yasushi Kurata ,  Yasuo Kamigata ,  Takeshi Uchida ,  Hiroki Terasaki ,  Akiko Igarashi

IPC分类号： B24B1/00 ,  C09K3/14

CPC分类号： C03C15/00 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.

摘要翻译： 本发明提供一种用于化学机械抛光的抛光介质，包括用于导体的氧化剂，用于保护金属表面的保护膜形成剂，酸和水; （1）抛光介质的pH为3以下，氧化剂浓度为0.01〜3重量％，或（2）研磨介质含有平均粒径为50nm的磨粒，或 较少，磨粒具有大于5nm的粒度分布的标准偏差。

公开(公告)号：US20070190906A1

公开(公告)日：2007-08-16

申请号：US11737502

申请日：2007-04-19

申请人： TAKESHI UCHIDA ,  Yasuo Kamigata ,  Hiroki Terasaki ,  Yasushi Kurata ,  Tetsuya Hoshino ,  Akiko Igarashi

发明人： TAKESHI UCHIDA ,  Yasuo Kamigata ,  Hiroki Terasaki ,  Yasushi Kurata ,  Tetsuya Hoshino ,  Akiko Igarashi

IPC分类号： B24B1/00 ,  B24C1/00

CPC分类号： B24B37/24 ,  C09G1/02 ,  C09G1/04 ,  C11D11/0047 ,  H01L21/3212

摘要： This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable that the water-soluble polymer has a weight-average molecular weight of 500 or more and the polishing medium has a coefficient of kinetic friction of 0.25 or more, a Ubbelode's viscosity of from 0.95 mPa·s (0.95 cP) to 1.5 mPa·s (1.5 cP) and a point-of-inflection pressure of 5 kPa (50 gf/cm2).

摘要翻译： 本发明提供了一种用于CMP的抛光介质，包括氧化剂，金属氧化物溶解剂，保护膜形成剂，水溶性聚合物和水，以及使用该抛光介质的研磨方法。 此外，优选水溶性聚合物的重均分子量为500以上，研磨介质的摩擦系数为0.25以上，Ubbelode粘度为0.95mPa·s（0.95cP） 至1.5mPa.s（1.5cP）和5kPa（50gf / cm 2）的拐点压力。

公开(公告)号：US20060266277A1

公开(公告)日：2006-11-30

申请号：US11374436

申请日：2006-03-14

申请人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

发明人： Tatsuya Usui ,  Naoaki Shimura ,  Yasushi Kurata ,  Kazuhisa Kurashige

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B30/04 ,  C30B28/10

CPC分类号： C30B31/08 ,  C30B29/34

摘要： A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T1 (units: ° C.) that satisfies the conditions represented by formula (3) below 800≦T1

摘要翻译： 一种单晶热处理方法，其特征在于，在不饱和的氧气氛中，在温度T 1℃（单位：℃）下加热特定的铈掺杂的硅酸盐化合物的单晶， 由式（3）表示的条件<？in-line-formula description =“In-line Formulas”end =“lead”？> 800 <= T <1 <（T < （3）<？in-line-formula description =“In-line Formulas”end =“tail”？>（其中T m1（单位：°C））表示 单晶的熔点）。

公开(公告)号：US20060186373A1

公开(公告)日：2006-08-24

申请号：US11407903

申请日：2006-04-21

申请人： Takeshi Uchida ,  Yasuo Kamigata ,  Hiroki Terasaki ,  Yasushi Kurata ,  Tetsuya Hoshino ,  Akiko Igarashi

发明人： Takeshi Uchida ,  Yasuo Kamigata ,  Hiroki Terasaki ,  Yasushi Kurata ,  Tetsuya Hoshino ,  Akiko Igarashi

IPC分类号： C09K13/00 ,  C09K13/06

CPC分类号： B24B37/24 ,  C09G1/02 ,  C09G1/04 ,  C11D11/0047 ,  H01L21/3212

摘要： This invention provides a polishing medium for CMP, comprising an oxidizing agent, a metal-oxide-dissolving agent, a protective-film-forming agent, a water-soluble polymer, and water, and a polishing method making use of this polishing medium. Also, it is preferable that the water-soluble polymer has a weight-average molecular weight of 500 or more and the polishing medium has a coefficient of kinetic friction of 0.25 or more, a Ubbelode's viscosity of from 0.95 mPa.s (0.95 cP) to 1.5 mPa.s (1.5 cP) and a point-of-inflection pressure of 5 kPa (50 gf/cm2).

摘要翻译： 本发明提供了一种用于CMP的抛光介质，包括氧化剂，金属氧化物溶解剂，保护膜形成剂，水溶性聚合物和水，以及使用该抛光介质的研磨方法。 此外，优选水溶性聚合物的重均分子量为500以上，研磨介质的摩擦系数为0.25以上，Ubbelode粘度为0.95mPa·s（0.95cP） 至1.5mPa.s（1.5cP）和5kPa（50gf / cm 2）的拐点压力。

公开(公告)号：US20060148667A1

公开(公告)日：2006-07-06

申请号：US10544073

申请日：2004-01-30

申请人： Masato Fukasawa ,  Masato Yoshida ,  Naoyuki Koyama ,  Yuto Ootsuki ,  Chiaki Yamagishi ,  Kazuhiro Enomoto ,  Kouji Haga ,  Yasushi Kurata

发明人： Masato Fukasawa ,  Masato Yoshida ,  Naoyuki Koyama ,  Yuto Ootsuki ,  Chiaki Yamagishi ,  Kazuhiro Enomoto ,  Kouji Haga ,  Yasushi Kurata

IPC分类号： C11D7/50

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物 和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任何一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

公开(公告)号：US20060124597A1

公开(公告)日：2006-06-15

申请号：US11352326

申请日：2006-02-13

申请人： Yasushi Kurata ,  Yasuo Kamigata ,  Takeshi Uchida ,  Hiroki Terasaki ,  Akiko Igarashi

发明人： Yasushi Kurata ,  Yasuo Kamigata ,  Takeshi Uchida ,  Hiroki Terasaki ,  Akiko Igarashi

IPC分类号： B44C1/22 ,  H01L21/461 ,  C23F1/00 ,  C03C15/00

CPC分类号： C03C15/00 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： This invention provides a polishing medium for chemical-mechanical polishing, comprising an oxidizing agent for a conductor, a protective-film-forming agent for protecting a metal surface, an acid, and. water; (1) the polishing medium having a pH of 3 or less, and the oxidizing agent being in a concentration of from 0.01 to 3% by weight, or (2) the polishing medium containing abrasive grains having an average particle diameter of 50 nm or less, and the abrasive grains having standard deviation of particle size distribution in a value of more than 5 nm.

摘要翻译： 本发明提供一种用于化学机械抛光的抛光介质，其包括用于导体的氧化剂，用于保护金属表面的保护膜形成剂，酸和。 水; （1）抛光介质的pH为3以下，氧化剂浓度为0.01〜3重量％，或（2）研磨介质含有平均粒径为50nm的磨粒，或 较少，磨粒具有大于5nm的粒度分布的标准偏差。