- 专利标题： Light-emitting diode and its manufacturing method
-
申请号： US11256001申请日： 2005-10-24
-
公开(公告)号： US20060038186A1公开(公告)日： 2006-02-23
- 发明人: Kazuaki Sasaki , Junichi Nakamura
- 申请人： Kazuaki Sasaki , Junichi Nakamura
- 申请人地址： JP Osaka
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Osaka
- 优先权： JP2003-148666 20030527
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.
公开/授权文献
- US07531370B2 Light-emitting diode and its manufacturing method 公开/授权日：2009-05-12
信息查询
IPC分类:
