发明申请
- 专利标题： Semiconductor memory
- 专利标题（中）： 半导体存储器
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申请号： US11202230申请日： 2005-08-12
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公开(公告)号： US20060039209A1公开(公告)日： 2006-02-23
- 发明人: Toshiaki Kawasaki , Masashi Agata , Masanori Shirahama , Ryuji Nishihara
- 申请人： Toshiaki Kawasaki , Masashi Agata , Masanori Shirahama , Ryuji Nishihara
- 优先权： JP2004-239132 20040819
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
Provided is a semiconductor memory, comprising: a voltage converting circuit which voltage-converts a resistance difference between a first and a second resistance elements; a voltage comparing circuit which outputs an output corresponding to the voltage conversion; a latch circuit for holding the output of the voltage comparing circuit; and a switch circuit which cuts and connects the voltage converting circuit and the voltage comparing circuit.
公开/授权文献
- US07193908B2 Semiconductor memory 公开/授权日：2007-03-20
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