发明申请
US20060039850A1 Method for manufacturing metal sulfide nanocrystals using thiol compound as sulfur precursor 有权
使用硫醇化合物作为硫前体制备金属硫化物纳米晶体的方法

  • 专利标题: Method for manufacturing metal sulfide nanocrystals using thiol compound as sulfur precursor
  • 专利标题(中): 使用硫醇化合物作为硫前体制备金属硫化物纳米晶体的方法
  • 申请号: US10967238
    申请日: 2004-10-19
  • 公开(公告)号: US20060039850A1
    公开(公告)日: 2006-02-23
  • 发明人: Shin JunEun JangSeong Choi
  • 申请人: Shin JunEun JangSeong Choi
  • 申请人地址: KR Gyeonggi-Do
  • 专利权人: Samsung Electronics Co., Ltd.
  • 当前专利权人: Samsung Electronics Co., Ltd.
  • 当前专利权人地址: KR Gyeonggi-Do
  • 优先权: KR10-2004-0027014 20040420
  • 主分类号: C01B17/20
  • IPC分类号: C01B17/20
Method for manufacturing metal sulfide nanocrystals using thiol compound as sulfur precursor
摘要:
Disclosed herein is a method for manufacturing metal sulfide nanocrystals using a thiol compound as a sulfur precursor. The method comprises reacting the thiol compound and a metal precursor in a solvent to grow metal sulfide crystals to the nanometer-scale level. Further disclosed is a method for manufacturing metal sulfide nanocrystals with a core-shell structure by reacting a metal precursor and a thiol compound in a solvent to grow a metal sulfide layer on the surface of a core. The metal sulfide nanocrystals prepared by these methods can have a uniform particle size at the nanometer-scale level, selective and desired crystal structures, and various shapes.
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