发明申请
US20060039850A1 Method for manufacturing metal sulfide nanocrystals using thiol compound as sulfur precursor
有权
使用硫醇化合物作为硫前体制备金属硫化物纳米晶体的方法
- 专利标题: Method for manufacturing metal sulfide nanocrystals using thiol compound as sulfur precursor
- 专利标题(中): 使用硫醇化合物作为硫前体制备金属硫化物纳米晶体的方法
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申请号: US10967238申请日: 2004-10-19
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公开(公告)号: US20060039850A1公开(公告)日: 2006-02-23
- 发明人: Shin Jun , Eun Jang , Seong Choi
- 申请人: Shin Jun , Eun Jang , Seong Choi
- 申请人地址: KR Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-Do
- 优先权: KR10-2004-0027014 20040420
- 主分类号: C01B17/20
- IPC分类号: C01B17/20
摘要:
Disclosed herein is a method for manufacturing metal sulfide nanocrystals using a thiol compound as a sulfur precursor. The method comprises reacting the thiol compound and a metal precursor in a solvent to grow metal sulfide crystals to the nanometer-scale level. Further disclosed is a method for manufacturing metal sulfide nanocrystals with a core-shell structure by reacting a metal precursor and a thiol compound in a solvent to grow a metal sulfide layer on the surface of a core. The metal sulfide nanocrystals prepared by these methods can have a uniform particle size at the nanometer-scale level, selective and desired crystal structures, and various shapes.
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