发明申请
- 专利标题： Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
- 专利标题（中）： 用于优化薄硫族化物层的热稳定性的反应溅射工艺
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申请号： US11214023申请日： 2005-08-30
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公开(公告)号： US20060043354A1公开(公告)日： 2006-03-02
- 发明人: Cay-Uwe Pinnow , Thomas Happ
- 申请人： Cay-Uwe Pinnow , Thomas Happ
- 优先权： DE102004041905.1 20040830
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and transition metals, X denotes one or more elements selected from the group consisting of S, Se and Te, and m has a value of between 0 and 1. The chalcogenide layer further includes an oxygen or nitrogen content in the range from 0.001 atomic % to 75 atomic %.