发明申请
- 专利标题： Semiconductor substrate and semiconductor device manufactured by epitaxial growth on the semiconductor substrate
- 专利标题（中）： 通过在半导体衬底上外延生长制造的半导体衬底和半导体器件
-
申请号： US11185768申请日： 2005-07-21
-
公开(公告)号： US20060043419A1公开(公告)日： 2006-03-02
- 发明人: Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
- 申请人： Koichi Tachibana , Chie Hongo , Shinya Nunoue , Masaaki Onomura
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2004-244072 20040824
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree.
公开/授权文献
信息查询
IPC分类:
