Invention Application
- Patent Title: Electron emitter
- Patent Title (中): 电子发射体
-
Application No.: US11210279Application Date: 2005-08-23
-
Publication No.: US20060043863A1Publication Date: 2006-03-02
- Inventor: Hirofumi Yamaguchi , Kei Sato , Toshikatsu Kashiwaya
- Applicant: Hirofumi Yamaguchi , Kei Sato , Toshikatsu Kashiwaya
- Applicant Address: JP Nagoya-City
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya-City
- Priority: JP2004-245833 20040825; JP2005-208337 20050719
- Main IPC: H01J1/14
- IPC: H01J1/14 ; H01J1/05

Abstract:
Provided is a piezoelectric-film-type electron emitter which enables suppression of reduction of electron emission quantity due to repeated use thereof, and which exhibits high durability. The electron emitter includes a substrate; an emitter section formed of a dielectric material; a first electrode formed on the top surface of the emitter section; and a second electrode formed on the bottom surface of the emitter section. The dielectric material forming the emitter section contains a dielectric composition having an electric-field-induced strain (i.e., percent deformation under application of an electric field of 4 kV/mm, as measured in a direction perpendicular to the electric field) of 0.07% or less.
Public/Granted literature
- US07511409B2 Dielectric film element and composition Public/Granted day:2009-03-31
Information query