发明申请
US20060046328A1 Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
有权
用于p型氮化物发光器件的超薄欧姆接触和形成方法
- 专利标题： Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
- 专利标题（中）： 用于p型氮化物发光器件的超薄欧姆接触和形成方法
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申请号： US11191111申请日： 2005-07-27
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公开(公告)号： US20060046328A1公开(公告)日： 2006-03-02
- 发明人: Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
- 申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
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