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    METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    4.
    发明申请
    METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 有权
    形成具有减少电流结构的发光装置的方法

    公开(公告)号：US20110008922A1

    公开(公告)日：2011-01-13

    申请号：US12879692

    申请日：2010-09-10

    申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L33/36

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

    Semiconductor devices having self aligned semiconductor mesas and contact layers
    5.
    发明申请
    Semiconductor devices having self aligned semiconductor mesas and contact layers 有权
    具有自对准半导体台面和接触层的半导体器件

    公开(公告)号：US20070007544A1

    公开(公告)日：2007-01-11

    申请号：US11520383

    申请日：2006-09-13

    申请人： Kevin Haberern ,  Raymond Rosado ,  Michael Bergman ,  David Emerson

    发明人： Kevin Haberern ,  Raymond Rosado ,  Michael Bergman ,  David Emerson

    IPC分类号： H01L33/00 ,  H01S5/00

    CPC分类号： H01L33/145 ,  H01S5/021 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/2275 ,  H01S5/32341 ,  H01S2301/176

    摘要： Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact layer has sidewalls and a contact surface opposite the mesa surface and wherein the contact layer extends across substantially an entirety of the mesa surface. A passivation layer can be formed on the mesa sidewalls and on portions of the contact layer sidewalls adjacent the mesa surface, and the passivation layer can expose substantially an entirety of the contact surface of the contact layer. Related devices are also discussed.

    摘要翻译： 形成半导体器件的方法可以包括在衬底上形成半导体结构，半导体结构具有台面侧壁和与衬底相对的台面。 接触层可以形成在台面表面上，其中接触层具有侧壁和与台面表面相对的接触表面，并且其中接触层延伸穿过基本上整个台面表面。 可以在台面侧壁和邻近台面表面的接触层侧壁的部分上形成钝化层，并且钝化层可以暴露接触层的基本上整个接触表面。 还讨论了相关设备。

    METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    8.
    发明申请
    METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 有权
    形成具有减少电流结构的发光装置的方法

    公开(公告)号：US20120153343A1

    公开(公告)日：2012-06-21

    申请号：US13406251

    申请日：2012-02-27

    申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L33/48 ,  H01L33/36

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

    Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
    10.
    发明申请
    Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices 审中-公开
    深紫外光发射装置及其制造深紫外光发射装置的方法

    公开(公告)号：US20060267043A1

    公开(公告)日：2006-11-30

    申请号：US11140384

    申请日：2005-05-27

    申请人： David Emerson ,  Michael Bergmann ,  Amber Abare ,  Kevin Haberern

    发明人： David Emerson ,  Michael Bergmann ,  Amber Abare ,  Kevin Haberern

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

    摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.

    摘要翻译： 提供发光装置和制造发射波长小于360nm，壁塞效率至少为4％的发光装置的方法。 墙壁插头效率可以至少为5％或至少为6％。 还提供了发光装置和制造发射波长小于345nm并具有至少2％壁塞效率的发光装置的方法。 提供发光装置和制造发射波长小于330nm，壁塞效率至少为0.4％的发光器件的方法。 具有峰值输出波长不大于360nm和输出功率至少为5mW的发光器件的发光器件和方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率 和/或峰值输出波长为330nm以下，输出功率为0.3mW以下，电流密度小于0.35μA/ m 2以下。 半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。