Invention Application
- Patent Title: Double-sided container capacitors using a sacrificial layer
- Patent Title (中): 双面容器电容器采用牺牲层
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Application No.: US11021639Application Date: 2004-12-22
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Publication No.: US20060046419A1Publication Date: 2006-03-02
- Inventor: Gurtej Sandhu , Kevin Shea , Chris Hill , Kevin Torek
- Applicant: Gurtej Sandhu , Kevin Shea , Chris Hill , Kevin Torek
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural layer. The structural layer is removed, creating an isolated lower electrode. The lower electrode can be covered with a capacitor dielectric and upper electrode to form a double-sided container capacitor.
Public/Granted literature
- US07329576B2 Double-sided container capacitors using a sacrificial layer Public/Granted day:2008-02-12
Information query
IPC分类: