公开(公告)号：US07932550B2

公开(公告)日：2011-04-26

申请号：US11215489

申请日：2005-08-30

Applicant: Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

Inventor： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

IPC: H01L27/108

CPC classification number: H01L28/91 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/32135 ,  H01L27/10852

Abstract: An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

Abstract translation: 蚀刻工艺包括在基片上提供电介质第一膜和在电介质第一膜上提供牺牲第二膜。 诸如容器电容器的导电结构形成在第一和第二膜的凹部中。 导电结构通过蚀刻工艺暴露于其外表面，该蚀刻工艺抵抗导电结构的破坏性破坏。

公开(公告)号：US20070173013A1

公开(公告)日：2007-07-26

申请号：US11726522

申请日：2007-03-22

Applicant: Kevin Torek ,  Kevin Shea

Inventor： Kevin Torek ,  Kevin Shea

IPC: H01L21/8244

CPC classification number: H01L28/40 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31625 ,  H01L27/1085

Abstract: In one embodiment, a method includes providing a semiconductor substrate that includes a memory container having a double-sided capacitor. The method also includes vapor phase etching a layer adjacent to the side wall of the memory container with a vapor having a surface tension lowering agent.

Abstract translation: 在一个实施例中，一种方法包括提供包括具有双面电容器的存储容器的半导体衬底。 该方法还包括用具有表面张力降低剂的蒸气相气相蚀刻存储容器侧壁附近的层。

公开(公告)号：US07214978B2

公开(公告)日：2007-05-08

申请号：US10789800

申请日：2004-02-27

Applicant: Kevin Torek ,  Kevin Shea

Inventor： Kevin Torek ,  Kevin Shea

IPC: H01L27/108

CPC classification number: H01L28/40 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31625 ,  H01L27/1085

Abstract: In one embodiment, a method includes providing a semiconductor substrate that includes a memory container having a double-sided capacitor. The method also includes vapor phase etching a layer adjacent to the side wall of the memory container with a vapor having a surface tension lowering agent.

公开(公告)号：US20060263729A1

公开(公告)日：2006-11-23

申请号：US11494056

申请日：2006-07-27

Applicant: Kevin Shea ,  Kevin Torek

Inventor： Kevin Shea ,  Kevin Torek

IPC: G03F7/26

CPC classification number: G03F7/423 ,  G03F7/425 ,  H01L21/31144

Abstract: A surface treatment process includes rinsing a substrate after a dry development process to remove residual resist material prior to patterning a hard mask layer. An amorphous carbon hard mask is dry developed and thereafter, the surface treatment includes an aqueous ammonium hydroxide and hydrogen peroxide composition. While the composition acts as a solvent to the resist, the composition is selective to the amorphous carbon hard mask and the surface under the hard mask.

公开(公告)号：US20050191805A1

公开(公告)日：2005-09-01

申请号：US10788977

申请日：2004-02-27

Applicant: Kevin Torek ,  Kevin Shea ,  Niraj Rana ,  Zhiping Yin

Inventor： Kevin Torek ,  Kevin Shea ,  Niraj Rana ,  Zhiping Yin

IPC: H01L21/20 ,  H01L21/8242 ,  H01L23/31

CPC classification number: H01L27/10852 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a method includes selectively depositing a collar material between a number of memory containers. The collar material along a side of a first memory container of the number of memory containers is in contact with the collar material along a side of a second memory container. An opening exists between the collar material along a corner of the first memory container and the collar material along a corner of a third memory container.

Abstract translation: 在一个实施例中，一种方法包括在多个存储器容器之间选择性地沉积套环材料。 沿着存储容器数量的第一存储容器的一侧的套环材料沿着第二存储容器的侧面与套环材料接触。 在沿着第一存储容器的角部的套环材料和沿着第三存储容器的角部的套环材料之间存在开口。

公开(公告)号：US06235145B1

公开(公告)日：2001-05-22

申请号：US09119160

申请日：1998-07-20

Applicant: Li Li ,  Donald L. Westmoreland ,  Richard C. Hawthorne ,  Kevin Torek

Inventor： Li Li ,  Donald L. Westmoreland ,  Richard C. Hawthorne ,  Kevin Torek

IPC: C23F102

CPC classification number: H01L21/02068 ,  C09K13/06 ,  H01L21/02049 ,  H01L21/02063 ,  H01L28/84 ,  Y10S438/906

Abstract: A method of cleaning wafer surfaces includes providing a wafer surface and cleaning the wafer surface using at least hydrofluoric acid (HF) and an etch reducing component. The etch reducing component is from the group of (R)4NOH wherein R═(C1-C20)alkyls, either straight or branch chained, and further wherein each R is independently a (C1-C20)alkyl, preferably a (C1-C4)alkyl, and more preferably one of tetra ethyl ammonium hydroxide (TEAH) and tetra methyl ammonium hydroxide (TMAH). A cleaning solution for use in cleaning a wafer surface includes an H2O diluted HF solution and an etch reducing component from the group above, preferably, TMAH. A system for performing an HF vapor cleaning process includes a vapor chamber for positioning a wafer having a wafer surface and means for providing an HF vapor to the vapor chamber. The HF vapor includes an inert carrier gas, an HF component, one of a water vapor or an alcohol vapor, and an etch reducing component. The etch reducing component may be from the group above, preferably, TMAH.

Abstract translation: 清洁晶片表面的方法包括使用至少氢氟酸（HF）和蚀刻减少部件提供晶片表面和清洁晶片表面。 蚀刻还原组分来自（R）4NOH基团，其中R =（C 1 -C 20）烷基，直链或支链，并且其中每个R独立地为（C 1 -C 20）烷基，优选为（C 1 -C 4） ）烷基，更优选四乙基氢氧化铵（TEAH）和四甲基氢氧化铵（TMAH）中的一种。 用于清洁晶片表面的清洁溶液包括H 2 O稀释的HF溶液和来自上述组的蚀刻减少组分，优选TMAH。 用于执行HF蒸汽清洗过程的系统包括用于定位具有晶片表面的晶片的蒸气室和用于向蒸气室提供HF蒸气的装置。 HF蒸汽包括惰性载体气体，HF组分，水蒸气或醇蒸气之一和蚀刻减少组分。 蚀刻减少组分可以来自上述组，优选为TMAH。

公开(公告)号：US20110159698A2

公开(公告)日：2011-06-30

申请号：US11510010

申请日：2006-08-24

Applicant: Kevin Torek ,  Todd Abbott ,  Sandra Tagg ,  Amy Weatherly

Inventor： Kevin Torek ,  Todd Abbott ,  Sandra Tagg ,  Amy Weatherly

IPC: H01L21/302

CPC classification number: H01L21/32139 ,  G03F7/16 ,  G03F7/322 ,  H01L21/0271

Abstract: A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating.

Abstract translation: 光致抗蚀剂处理方法包括用含硫物质处理基材。 将正色调光致抗蚀剂施加在经处理的基底上并与其接触。 该方法包括将光致抗蚀剂的一部分选择性地暴露于光化能量并显影光致抗蚀剂以去除暴露部分并在基底上形成光刻胶图案。 与含有硫物质的处理相比，与不进行处理的剩余光致抗蚀剂相比，减少了用于去除的残留光致抗蚀剂的量。

公开(公告)号：US07468323B2

公开(公告)日：2008-12-23

申请号：US10788899

申请日：2004-02-27

Applicant: Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

Inventor： Kevin Torek ,  Kevin Shea ,  Thomas Graettinger

IPC: H01L21/302

CPC classification number: H01L28/91 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32134 ,  H01L21/32135 ,  H01L27/10852

Abstract: An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

Abstract translation: 蚀刻工艺包括在基片上提供电介质第一膜和在电介质第一膜上提供牺牲第二膜。 诸如容器电容器的导电结构形成在第一和第二膜的凹部中。 导电结构通过蚀刻工艺暴露于其外表面，该蚀刻工艺抵抗导电结构的破坏性破坏。

公开(公告)号：US20060046513A1

公开(公告)日：2006-03-02

申请号：US11155809

申请日：2005-06-17

Applicant: Kevin Shea ,  Kevin Torek

Inventor： Kevin Shea ,  Kevin Torek

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76802 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76838

Abstract: A method is provided for selectively etching native oxides or other contaminants to metal nitrides and metal oxides during manufacture of a semiconductor device. he method utilizes a substantially non-aqueous etchant which includes a source of fluorine ions. In a preferred embodiment, the etchant comprises H2SO4 and HF. The etchant selectively etches native and doped oxides or other contaminants without excessively etching metal nitrides or metal oxides on the substrate or on adjacent exposed surfaces.

Abstract translation: 提供了一种在制造半导体器件期间选择性地将天然氧化物或其它污染物刻蚀成金属氮化物和金属氧化物的方法。 他方法利用包括氟离子源的基本非水性蚀刻剂。 在优选的实施方案中，蚀刻剂包括H 2 SO 4 H 4和HF。 蚀刻剂选择性地蚀刻天然的和掺杂的氧化物或其它污染物，而不会过度地蚀刻衬底上或邻近暴露表面上的金属氮化物或金属氧化物。

公开(公告)号：US20060008926A1

公开(公告)日：2006-01-12

申请号：US11217037

申请日：2005-08-31

Applicant: Kevin Torek ,  Kevin Shea

Inventor： Kevin Torek ,  Kevin Shea

IPC: H01L21/00

CPC classification number: H01L28/40 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31625 ,  H01L27/1085

Abstract: In one embodiment, a method includes providing a semiconductor substrate that includes a memory container having a double-sided capacitor. The method also includes vapor phase etching a layer adjacent to the side wall of the memory container with a vapor having a surface tension lowering agent.