发明申请
- 专利标题： Insulated gate semiconductor device and method of manufacturing insulated gate semiconductor device
- 专利标题（中）： 绝缘栅半导体器件及制造绝缘栅半导体器件的方法
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申请号： US11216014申请日： 2005-09-01
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公开(公告)号： US20060049456A1公开(公告)日： 2006-03-09
- 发明人: Koichi Sugiyama
- 申请人： Koichi Sugiyama
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-259206 20040907
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/94
摘要：
Disclosed is an insulated gate semiconductor device comprising: a first region having a gate electrode region and a first insulating film region surrounding the gate electrode region; a semiconductor region which includes a channel forming region and is disposed to oppose the gate electrode region with the first insulating film region between them; and a second region which has a conductor region buried in a semiconductor region not including the channel forming region disposed to oppose the gate electrode region with the first insulating film region between them, and has a second insulating film region which separates the conductor region from the semiconductor region.
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