Invention Application
US20060049516A1 Nickel/gold pad structure of semiconductor package and fabrication method thereof
审中-公开
半导体封装的镍/金焊盘结构及其制造方法
- Patent Title: Nickel/gold pad structure of semiconductor package and fabrication method thereof
- Patent Title (中): 半导体封装的镍/金焊盘结构及其制造方法
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Application No.: US11145318Application Date: 2005-06-03
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Publication No.: US20060049516A1Publication Date: 2006-03-09
- Inventor: Yu-Po Wang , Chiang-Cheng Chang , Chien-Te Chen
- Applicant: Yu-Po Wang , Chiang-Cheng Chang , Chien-Te Chen
- Applicant Address: TW Taichung Hsien
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung Hsien
- Priority: TW093126966 20040907
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A nickel/gold (Ni/Au) pad structure of a semiconductor package and a fabrication method thereof are provided. The fabrication method includes preparing a core layer; forming a conductive trace layer on the core layer; patterning the conductive trace layer to form at least one pad of the conductive trace layer; applying a conductive layer; forming a photoresist layer to define a predetermined plating region on the pad, wherein the predetermined plating region is smaller in area than the pad; forming a Ni/Au layer on the predetermined plating region; removing the photoresist layer and etching away the conductive layer; and applying a solder mask layer and forming at least one opening in the solder mask layer to expose the pad, wherein the opening is larger in area than the Ni/Au layer. The Ni/Au pad structure fabricated by the above method can prevent a solder extrusion effect incurred in the conventional technology.
Information query
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