摘要:
A circuit board structure and a method for fabricating the same are disclosed, including providing a core board having conductive traces and solder pads respectively formed thereon, wherein width of the solder pads corresponds to that of the conductive traces, and pitch between adjacent solder pads is made wide enough to allow multiple conductive traces to pass through; forming on the core board an insulating layer with openings for exposing the solder pads therefrom; forming on the insulating layer a plurality of extending pads electrically connected to the solder pads respectively, wherein the projection area of the extending pads is larger than that of the corresponding solder pads and covers conductive traces adjacent to the corresponding solder pads. Thus, more conductive traces are allowed to pass between adjacent solder pads and meanwhile, the extending pads provide an effective solder ball wetting area for achieving good solder joints and sufficient height after collapse.
摘要:
A circuit board with a quality-indicator mark and a method for indicating quality of the circuit board. The circuit board includes a plurality of circuit board units. A plating bus is formed around each circuit board unit and extended to form a plating trace in an inner-layer circuit structure of each circuit board unit. The inner-layer circuit structure is inspected in quality to maintain or break connection between the plating trace and plating bus if the quality is good or not. At least one circuit structure is formed on the inner-layer circuit structure and electrically connected to the plating trace to form a conductive mark on each circuit board unit. A metal protection layer is formed on the at least one circuit structure via the plating bus, and the conductive mark with the metal protection layer indicates that the inner-layer circuit structure of the circuit board unit is good.
摘要:
A circuit board with a quality-indicator mark and a method for indicating quality of the circuit board. The circuit board includes a plurality of circuit board units. A plating bus is formed around each circuit board unit and extended to form a plating trace in an inner-layer circuit structure of each circuit board unit. The inner-layer circuit structure is inspected in quality to maintain or break connection between the plating trace and plating bus if the quality is good or not. At least one circuit structure is formed on the inner-layer circuit structure and electrically connected to the plating trace to form a conductive mark on each circuit board unit. A metal protection layer is formed on the at least one circuit structure via the plating bus, and the conductive mark with the metal protection layer indicates that the inner-layer circuit structure of the circuit board unit is good.
摘要:
A high electrical performance semiconductor package is proposed. A carrier is provided having a first surface, an opposite second surface, and conductive vias for electrically connecting the first surface to the second surface. A chip is attached to the first surface of the carrier. A plurality of via lands are disposed peripherally on the first surface of the carrier and electrically connected to the vias. A plurality of conductive regions are disposed on the second surface of the carrier and electrically connected to the vias. A plurality of fingers are disposed around the chip and electrically connected to the via lands by conductive traces formed on the first surface of the carrier. A plurality of bonding wires electrically connect the chip to the fingers. Lengths of the wires for transmitting differential pair signals are substantially equal, and lengths of the traces for transmitting the differential pair signals are substantially equal.
摘要:
A flash preventing substrate and a method for fabricating the same are proposed. A core defined with a plurality of substrate units is prepared. A circuit patterning process is performed to form circuit structures on the core corresponding to the substrate units, plating buses between the adjacent substrate units and electrically connected to the circuit structures, and a molding ring surrounding all the substrate units. The molding ring is located at a position predetermined for contacting the substrate with a mold. A solder mask layer covers the circuit structures, the plating buses and the molding ring, and is formed with a plurality of openings therein, such that predetermined portions of the circuit structures are exposed via the openings and serve as electrical input/output connections. During a molding process, the mold can tightly abut against the solder mask layer covering the molding ring to prevent outward flashes of an encapsulating material.
摘要:
A substrate for accommodating a passive component is proposed, including a core layer defined with a chip attach area and a trace forming area surrounding the chip attach area, with a solder mask layer being applied on the trace forming area. At least a pair of solder pads are formed on the trace forming area, and partly exposed to outside of the solder mask layer. The solder pads are each formed at a central position with an recess, allowing the core layer to be partly exposed through the recesses of the solder pads. For bonding a passive component to the solder pads, solder paste soldered on the solder pads forms a recessed top surface due to surface tension of the solder paste, and generates a downward and convergent dragging force for properly positioning the passive component on the solder pads without producing shifting or tombstone effect.
摘要:
A BGA (Ball Grid Array) package is proposed, which is characterized by the provision of an interdigitated power/ground ring layout scheme. By this layout scheme, the power ring and the ground ring are each formed with a line portion and a plurality of toothed portions; with the toothed portions of the power ring being are interdigitated with the toothed portions of the ground ring. Moreover, the power/ground vias are all connected to the toothed portions of the power ring and the ground ring, thereby leaving the line portions of the power ring and the ground ring unoccupied by the power/ground vias, allowing the routability of power/ground wires to be higher than the prior art. Moreover, solder bask is formed in such a manner as to cover all the toothed portions of the ground ring, so that power wires can be prevented from being short-circuited to the ground ring due to sagging. Further, the toothed portions of the power ring and the ground ring are large in area, whereby two or more power vias or ground vias can be gathered together to increase the overall electrical performance, and whereby the packaged chip can be increased in heat-dissipation efficiency.
摘要:
A nickel/gold (Ni/Au) pad structure of a semiconductor package and a fabrication method thereof are provided. The fabrication method includes preparing a core layer; forming a conductive trace layer on the core layer; patterning the conductive trace layer to form at least one pad of the conductive trace layer; applying a conductive layer; forming a photoresist layer to define a predetermined plating region on the pad, wherein the predetermined plating region is smaller in area than the pad; forming a Ni/Au layer on the predetermined plating region; removing the photoresist layer and etching away the conductive layer; and applying a solder mask layer and forming at least one opening in the solder mask layer to expose the pad, wherein the opening is larger in area than the Ni/Au layer. The Ni/Au pad structure fabricated by the above method can prevent a solder extrusion effect incurred in the conventional technology.
摘要:
Methods for the formation of single-cap VIPs in a substrate are described herein. The methods may include initially providing a substrate having a first and a second side, the first side being opposite of the second side. A via may then be constructed in the substrate, the via being formed within a via hole that extends from the first side to the second side of the substrate, the formed via having a first end located at the first side of the substrate, and a second end opposite the first end located at the second side of the substrate. A selective deposition may be performed of a conductive material on the second end of the via to form a conductive pad directly on the via on the second side of the substrate without depositing the conductive material onto the first side of the substrate.
摘要:
A high electrical performance semiconductor package is proposed. A carrier is provided having a first surface, an opposite second surface, and conductive vias for electrically connecting the first surface to the second surface. A chip is attached to the first surface of the carrier. A plurality of via lands are disposed peripherally on the first surface of the carrier and electrically connected to the vias. A plurality of conductive regions are disposed on the second surface of the carrier and electrically connected to the vias. A plurality of fingers are disposed around the chip and electrically connected to the via lands by conductive traces formed on the first surface of the carrier. A plurality of bonding wires electrically connect the chip to the fingers. Lengths of the wires for transmitting differential pair signals are substantially equal, and lengths of the traces for transmitting the differential pair signals are substantially equal.