发明申请
- 专利标题: Non-volatile memory device
- 专利标题(中): 非易失性存储器件
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申请号: US11204316申请日: 2005-08-16
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公开(公告)号: US20060050593A1公开(公告)日: 2006-03-09
- 发明人: Masayuki Toyama , Tokuzo Kiyohara
- 申请人: Masayuki Toyama , Tokuzo Kiyohara
- 专利权人: Matsushita Electric Industrial Co.
- 当前专利权人: Matsushita Electric Industrial Co.
- 优先权: JP2004-257278 20040903
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
A non-volatile memory device is disclosed that can reduce the time required for the initialization process. A non-volatile memory device includes a non-volatile memory array having a plurality of pages. Each page includes a plurality of non-volatile memory cells, a first region for storing data, and a second region for storing control data that is associated with the data of the first region. The non-volatile memory device further includes a read out unit for reading out data from the pages, and a data buffer for temporarily storing data that has been read out from the pages by the read out unit. When reading out the control data, the read out unit reads out the second regions, across a plurality of pages, at one time.
公开/授权文献
- US07259989B2 Non-volatile memory device 公开/授权日:2007-08-21
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