发明申请
- 专利标题： Sound detecting mechanism and process for manufacturing the same
- 专利标题（中）： 声音检测机构及其制造方法
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申请号： US10544120申请日： 2004-05-25
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公开(公告)号： US20060050905A1公开(公告)日： 2006-03-09
- 发明人: Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Masatsugu Komai , Kenichi Kagawa
- 申请人： Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Masatsugu Komai , Kenichi Kagawa
- 申请人地址： JP Osaka 581-0071 JP Tokyo 17-8481
- 专利权人： HOSIDEN CORPORATION,TOKYO ELECTRON LIMITED
- 当前专利权人： HOSIDEN CORPORATION,TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Osaka 581-0071 JP Tokyo 17-8481
- 优先权： JP2003-148919 20030527
- 国际申请： PCT/JP04/07091 WO 20040525
- 主分类号： H04R25/00
- IPC分类号： H04R25/00
摘要：
A sound detecting mechanism is provided which forms a diaphragm with a required thickness and yet restraining distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. A silicon nitride film 303 is provided on the side adjacent a base of the substrate A with respect to a membrane acting as the diaphragm B formed on the substrate A.